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Nexperia Dual NPN and PNP Bipolar Transistor, 500 mA Collector Current, 45 V Collector-Emitter Voltage, 6-Pin BC817DPN

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1.1mm
Length 3.1mm
Model BC817DPN
Width 3mm
Mount Type Surface
Series BC817DPN
Maximum Operating Temperature 150°C
Package Type SOT-457
Minimum Operating Temperature -65°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Maximum Power Dissipation Pd 600mW
Maximum DC Collector Current Idc 500mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 100MHz

Key Features

  • Maximum collector current of 500 mA suitable for moderate power applications.
  • Collector-Emitter voltage rating of 45 V ensuring high voltage switching capability.
  • Compact 6-pin SOT-457 package type for efficient surface mounting.
  • Isolated transistor configuration for reduced crosstalk and interference.
  • Supports operating temperature range from -65°C to 150°C for reliable performance in diverse environments.
  • Maximum power dissipation of 600 mW allowing stable operation under thermal load.
  • Transition frequency up to 100 MHz enabling high-frequency switching applications.
  • Minimum DC current gain of 40 ensuring effective amplification.

Product Description

Nexperia BC817DPN is a high-quality dual bipolar transistor featuring both NPN and PNP types in a single 6-pin SOT-457 surface mount package. It supports a maximum collector current of 500 mA and a collector-emitter voltage rating of 45 V, making it ideal for diverse semiconductor circuit applications including signal amplification and switching.

The device's isolated transistor configuration minimizes device interference and enhances circuit stability. Operating safely between -65°C and +150°C, this transistor suits demanding industrial, consumer electronics, and automotive environments where temperature resilience is critical.

With a maximum power dissipation of 600 mW and a transition frequency of 100 MHz, the BC817DPN transistor accommodates moderate power and high-frequency requirements efficiently. Its minimum DC current gain of 40 guarantees consistent performance in amplification tasks.

The compact dimensions of 3.1 mm by 3 mm by 1.1 mm support dense PCB layout designs, benefiting surface-mount technology manufacturing and automation. Manufactured in Malaysia, this transistor adheres to industry standards, except it carries no specific certification approvals.

Maximum collector current of 500 mA suitable for moderate power applications. Collector-Emitter voltage rating of 45 V ensuring high voltage switching capability. Compact 6-pin SOT-457 package type for efficient surface mounting.

Isolated transistor configuration for reduced crosstalk and interference. Supports operating temperature range from -65°C to 150°C for reliable performance in diverse environments. Maximum power dissipation of 600 mW allowing stable operation under thermal load.

Transition frequency up to 100 MHz enabling high-frequency switching applications. Minimum DC current gain of 40 ensuring effective amplification. Dimensions approximately 3.1 mm length, 3 mm width, and 1.1 mm height.

This dual transistor is widely used in electronic component, semiconductor, and discrete semiconductor applications for Industrial, HVAC, manufacturing, commercial electronics, and laboratory setups. Suitable for embedding in power supply circuits, amplifier stages, and signal processing modules.

For extensive selections and more options, explore the Bipolar Transistors category on EnvMart for seamless sourcing and product comparison.

Nexperia Dual NPN and PNP Bipolar Transistor, 500 mA Collector Current, 45 V Collector-Emitter Voltage, 6-Pin BC817DPN
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