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Nexperia High Voltage PNP Bipolar Transistor 3-Pin SOT-23 -100 mA 300 V 250 mW PMBTA92,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 3mm
Model PMBTA92,215
Width 1.4mm
Mount Type Surface
Series PMBTA92
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -300V
Minimum DC Current Gain hFE 40
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -300V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • The transistor features a maximum power dissipation of 250 mW supporting robust power handling.
  • Maximum collector base voltage is -300 V ensuring high voltage applications suitability.
  • Designed for operation within a temperature range of -65°C to 150°C.
  • Compact form factor with dimensions approximately 3 mm length, 1.4 mm width, and 1.1 mm height.
  • Minimum DC current gain (hFE) of 40 and maximum transition frequency (ft) of 100 MHz.
  • Conforms to RoHS standards and meets the automotive grade AEC-Q101 standard.
  • Ideal for electronic circuit switching and amplification in automotive and industrial applications.
  • Package is a standard SOT-23 suitable for surface mount PCB assembly.

Product Description

The Nexperia PMBTA92,215 is a high voltage PNP bipolar transistor housed in a compact 3-pin SOT-23 surface mount package. It supports a maximum DC collector current of -100 mA and collector emitter voltage of -300 V, ideal for electronic switching and amplification tasks in industrial and automotive electronics.

This transistor is designed to handle power dissipation up to 250 mW and operates reliably within a temperature range from -65°C to 150°C. The device offers a minimum DC current gain (hFE) of 40, allowing stable performance, and a transition frequency of up to 100 MHz suitable for medium frequency applications.

Its small footprint measures approximately 3 mm in length, 1.4 mm in width, and 1.1 mm in height, making it suitable for dense printed circuit board (PCB) layouts. Moreover, it complies with RoHS environmental standards and the automotive-grade AEC-Q101, ensuring quality and reliability in automotive system designs.

The transistor’s maximum collector base voltage and emitter base voltage ratings are -300 V and -5 V respectively, supporting high voltage circuit designs. Its single transistor configuration and PNP polarity make it a versatile component for low to medium power electronic devices.

Applications include automotive electronics, industrial control systems, and power management circuits where reliable switching and amplification are required. The PMBTA92 series is recognized for quality performance in high voltage scenarios and offers an excellent balance of efficiency and size.

The transistor features a maximum power dissipation of 250 mW supporting robust power handling. Maximum collector base voltage is -300 V ensuring high voltage applications suitability. Designed for operation within a temperature range of -65°C to 150°C.

Compact form factor with dimensions approximately 3 mm length, 1.4 mm width, and 1.1 mm height. Minimum DC current gain (hFE) of 40 and maximum transition frequency (ft) of 100 MHz. Conforms to RoHS standards and meets the automotive grade AEC-Q101 standard.

Ideal for electronic circuit switching and amplification in automotive and industrial applications. Package is a standard SOT-23 suitable for surface mount PCB assembly. Explore more quality Bipolar Transistors and electronic components from the semiconductor category at EnvMart for industrial, automotive, and manufacturing needs.

Nexperia High Voltage PNP Bipolar Transistor 3-Pin SOT-23 -100 mA 300 V 250 mW PMBTA92,215
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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) for this model is -300 V, making it suitable for high voltage applications.

This transistor supports a maximum power dissipation of 250 mW, allowing for robust power handling in various applications.

It operates reliably within a temperature range of -65°C to 150°C, suitable for diverse environmental conditions.

The dimensions of the SOT-23 package are approximately 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

The minimum DC current gain (hFE) for this transistor is 40, ensuring stable performance in electronic circuits.

The maximum transition frequency (ft) is 100 MHz, making it suitable for medium frequency applications.

This model supports a maximum DC collector current of -100 mA, which is ideal for various electronic applications.

It complies with the automotive-grade AEC-Q101 standard, ensuring quality and reliability for automotive applications.

This model is a PNP bipolar transistor, suitable for electronic circuit switching and amplification.

The maximum emitter base voltage (VEBO) for this model is -5 V, which is important for circuit design.

It is designed for surface mount PCB assembly, making it suitable for compact electronic designs.

The PMBTA92,215 conforms to RoHS standards, ensuring it meets environmental regulations.

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