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Nexperia Small Signal PNP Transistor 3-Pin SOT-23 Package, -100 mA Maximum DC Collector Current, -40 V Maximum PMBS3906,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin Malaysia
Brand Nexperia
Height 1.1mm
Length 3mm
Model PMBS3906,215
Width 2.5mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -40V
Minimum DC Current Gain hFE 30
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 40V
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc -100mA
Transistor Configuration Single
onsemi MMBT3906LT1G Transistor, -200 mA PNP, -40 V, 3-Pin SOT-23Brand onsemi

Key Features

  • Maximum DC collector current of 100 mA for moderate power needs.
  • Collector emitter voltage rating of 40 V for reliable operation in low voltage circuits.
  • Compact 3 mm length, 2.5 mm width, 1.1 mm height SOT-23 package for space-constrained PCB layouts.
  • Surface mount device enabling easy automated assembly on printed circuit boards.
  • Operating temperature range from -65°C to 150°C suitable for industrial environments.
  • Minimum DC current gain (hFE) of 30 ensuring good amplification performance.
  • Maximum power dissipation of 250 mW for small signal applications.
  • Pin count of 3 pins with a single transistor configuration.

Product Description

The Nexperia PMBS3906,215 is a small signal PNP bipolar junction transistor featuring a compact 3-pin SOT-23 surface mount package ideal for low power amplification and switching uses in electronic circuits.

With a maximum DC collector current rating of -100 mA, collector emitter voltage of -40 V, and maximum power dissipation of 250 mW, this transistor excels in applications requiring moderate current and voltage handling in a small footprint.

Its single transistor configuration with PNP polarity allows it to be used effectively in complementary transistor arrangements or single-ended amplifier designs. The minimum DC current gain of 30 ensures sufficient amplification performance for signal processing.

The PMBS3906,215’s compact dimensions (3 mm length, 2.5 mm width, 1.1 mm height) and surface mount design enable easy integration into densely packed printed circuit boards with automated assembly methods.

Operating reliably across extreme temperature ranges from -65°C to 150°C, it suits a variety of industrial, automotive, and commercial electronic applications requiring robustness.

Maximum DC collector current of 100 mA for moderate signal and power needs. Collector emitter voltage maximum of 40 V enabling use in low to medium voltage circuits. Compact SOT-23 surface mount package for space-efficient layouts.

Wide operating temperature range from -65°C to 150°C for reliability in harsh environments. Minimum DC current gain hFE of 30 providing good transistor amplification characteristics. Maximum power dissipation of 250 mW suitable for small signal applications.

Single configuration PNP transistor type for versatile design. Three pin count ensuring simple PCB integration. Produced in Malaysia with high quality manufacturing processes.

This product is ideal for electronic designers and manufacturers looking for a dependable, compact PNP transistor for industrial, automotive, consumer electronics, and general purpose amplification and switching tasks.

Explore more high-quality Bipolar Transistors and semiconductors at EnvMart to enhance your electronic project performance and reliability.

Nexperia Small Signal PNP Transistor 3-Pin SOT-23 Package, -100 mA Maximum DC Collector Current, -40 V Maximum PMBS3906,215
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Frequently Asked Questions

The maximum DC collector current for the Nexperia PMBS3906,215 is -100 mA, suitable for moderate power needs.

This model has a maximum collector-emitter voltage rating of -40 V, allowing reliable operation in low voltage circuits.

The SOT-23 package of this transistor measures 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

The operating temperature range for the PMBS3906,215 is from -65°C to 150°C, making it suitable for industrial environments.

The minimum DC current gain (hFE) for this transistor is 30, ensuring good amplification performance.

The maximum power dissipation for the PMBS3906,215 is 250 mW, suitable for small signal applications.

This model features a pin count of 3, configured as a single transistor.

The PMBS3906,215 is a PNP transistor, which allows it to be used effectively in complementary transistor arrangements.

It utilizes a surface mount design, enabling easy automated assembly on printed circuit boards.

This small signal transistor is suitable for low power amplification and switching uses in electronic circuits, including industrial and automotive applications.

The maximum emitter-base voltage (VEBO) for the PMBS3906,215 is 5 V.

The PMBS3906,215 is produced in Malaysia, ensuring adherence to high manufacturing standards.

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