Nexperia Bipolar PNP Transistor DFN1412D-3 3-Pin, -100 mA Collector Current, -45 V Collector Emitter Voltage BC857BQC-QZ

The Nexperia BC857BQC-QZ is a bipolar PNP transistor housed in a compact ultra-small DFN1412D-3 (SOT8009) leadless surface mount device (SMD) plastic package. It supports a maximum DC collector current of -100 mA and a maximum collector emitter voltage of -45 V, making it suitable for switching and amplification tasks in electronics.

This transistor features a high minimum DC current gain of 220, providing good amplification characteristics. The device operates reliably over a broad temperature range from -55°C to 150°C, complying with automotive standards under the AEC-Q101 certification, ensuring robust performance in demanding automotive environments.

The DFN1412D-3 package is designed with side-wettable flanks to facilitate automatic optical inspection (AOI) during PCB assembly, resulting in improved quality control. Its small footprint and low package height of 0.5 mm make it ideal for use in compact and space-restricted electronic designs.

Applications for this transistor include general-purpose switching and amplification in consumer electronics, automotive electronic control units, and other industrial uses where reliable semiconductor performance is required.

Nexperia’s BC857xQC-Q series are designed to meet high quality and reliability standards with full RoHS compliance, emphasizing environmental responsibility and manufacturing excellence.

Maximum DC collector current of -100 mA. Collector emitter voltage rating of -45 V. Small DFN1412D-3 surface mount package. Automotive grade compliant (AEC-Q101). Operating temperature from -55°C to 150°C. High DC current gain with minimum 220 hFE.

Side-wettable flanks for automatic optical inspection. Low 0.5 mm package height. Explore more industrial-grade Bipolar Transistors in this category for diverse electronic design requirements.