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Infineon Broadband RF Bipolar Transistor 100 mA NPN 4.5 V 4-Pin SOT-343 BFP450H6327XTSA1

Category Bipolar Transistor Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Model BFP450H6327XTSA1
Mount Type Surface
Series BFP450
Maximum Operating Temperature 150°C
Package Type SOT-343
Minimum Operating Temperature -55°C
Standards/Approvals JEDEC47/20/22
Pin Count 4
Maximum Collector Emitter Voltage Vceo 4.5V
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 1.5V
Maximum Collector Base Voltage VCBO 15V
Maximum Power Dissipation Pd 500mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration NPN
Maximum Transition Frequency ft 24GHz

Key Features

  • Designed for low noise and broadband applications.
  • Suitable for cellular, cordless phones, DECT, tuners, FM, and RF modems.
  • Maximum power dissipation of 500 mW ensures reliable performance.
  • Operating temperature range from -55°C to 150°C for diverse environments.
  • High transition frequency of 24 GHz supports high-speed RF applications.
  • Compact SOT-343 package ensures space-efficient PCB design.
  • RoHS compliant and lead-free, meeting environmental standards.
  • Robust and pre-matched for ease of circuit design and consistent results.

Product Description

Infineon BFP450H6327XTSA1 is a broadband RF bipolar transistor featuring a robust and low noise NPN configuration designed for high frequency applications. Its maximum collector current rating is 100 mA with a collector-emitter voltage of 4.5 V, and it is housed in a compact 4-pin SOT-343 surface mount package.

This transistor is ideal for use in cellular phones, cordless phones, DECT systems, tuners, FM radio, and RF modems where low noise and high transition frequency are critical. The device supports maximum power dissipation of 500 mW, allowing it to operate effectively under demanding conditions.

The wide operating temperature range from -55°C up to 150°C ensures suitability for industrial and commercial electronic applications. With a maximum transition frequency (ft) of 24 GHz, it supports high-speed signal processing.

Low noise broadband RF bipolar transistor enhances signal integrity. Compact SOT-343 package facilitates surface mounting on compact circuit boards. Robust construction for reliable long-term operation in various environments.

Pre-matched transistor configuration optimizes circuit performance. RoHS compliant construction aligns with environmental safety regulations. Applications include cellular and cordless phones, DECT, tuners, FM, and RF modems.

Operates within an extended temperature range from -55°C to 150°C. Maximum power dissipation of 500 mW enables stable performance under load.

This transistor is part of the BFP450 series and conforms to JEDEC standards 47, 20, and 22, ensuring quality and reliability. Suitable for professional industrial, telecommunications, and manufacturing applications.

Explore more Bipolar Transistors and discrete semiconductor components on EnvMart for versatile electronics system design.

Infineon Broadband RF Bipolar Transistor 100 mA NPN 4.5 V 4-Pin SOT-343 BFP450H6327XTSA1
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Frequently Asked Questions

The maximum collector current rating is 100 mA.

It operates within a temperature range from -55°C to 150°C.

The maximum power dissipation is 500 mW.

This transistor is housed in a compact 4-pin SOT-343 surface mount package.

The maximum transition frequency is 24 GHz, suitable for high-speed RF applications.

The maximum collector-emitter voltage (Vceo) is 4.5 V, and the maximum collector-base voltage (Vcbo) is 15 V.

Yes, it is RoHS compliant and lead-free, meeting environmental standards.

It features an NPN transistor configuration.

It conforms to JEDEC standards 47, 20, and 22.

It is suitable for use in cellular phones, cordless phones, DECT systems, tuners, FM radio, and RF modems.

The pin count for this transistor is 4.

The maximum emitter-base voltage (VEBO) is 1.5 V.

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