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Nexperia Silicon Junction Switching Diode 2-Pin SOD-323 250 mA 200 V BAS321,115

Category Switching Diodes Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.05mm
Length 1.8mm
Model BAS321,115
Width 1.35mm
Mount Type Surface
Series BAS321
Maximum Operating Temperature 150°C
Package Type SOD-323
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Power Dissipation Pd 250mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 9A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 250mA
Maximum Peak Reverse Repetitive Voltage Vrrm 200V
onsemi 250 V 200 mA Diode General Purpose 2-Pin SOD-323 BAS21AHT1GBrand onsemi

Key Features

  • Operates with a maximum forward current of 250 mA for efficient signal switching.
  • Utilizes a silicon junction type diode for reliable performance in electronic circuits.
  • Compact SOD-323 surface mount package with 2 pins for space-saving designs.
  • Maximum power dissipation of 250 mW provides stability under typical loads.
  • High-speed switching characteristic with a peak reverse recovery time of 4 ns.
  • Wide operating temperature range from -65°C to 150°C for diverse applications.
  • Maximum forward voltage rating of 1.25 V ensures low voltage drop within circuits.
  • Can withstand peak surge currents up to 9 A for transient protection.

Product Description

Nexperia BAS321,115 Silicon Junction Switching Diode is a compact, surface-mount diode designed for small signal switching applications. It features a single silicon junction diode configuration housed in a 2-pin SOD-323 package. This diode supports a maximum forward current of 250 mA and can sustain a maximum peak repetitive reverse voltage of 200 V, making it suitable for various electronic and industrial uses requiring high voltage tolerance.

The device dissipates up to 250 mW of power and exhibits a fast switching capability with a peak reverse recovery time of only 4 nanoseconds, enabling quick response in switching circuits and signal processing applications. The maximum forward voltage of 1.25 V helps maintain circuit efficiency by minimizing voltage loss.

Designed for durability and reliability, it operates safely across a broad temperature range from -65°C to 150°C, suitable for both commercial and industrial environments including consumer electronics, telecommunications, and automotive electronics that do not require automotive-grade certification. The compact dimensions of 1.8 mm length, 1.35 mm width, and 1.05 mm height facilitate dense PCB layouts, optimizing space utilization in high-density circuit designs.

This diode supports customized high-density circuit designs, providing low leakage current and high-voltage capabilities. Its low capacitance enhances switching performance, making it ideal for signal and power rectification roles within complex electronic assemblies.

Maximum forward current capability of 250 mA ensures effective switching performance. Silicon junction diode type provides dependable electrical characteristics. SOD-323 surface mount package supports space-constrained PCB implementations.

250 mW maximum power dissipation stabilizes device under load. 4 ns peak reverse recovery time enables high-speed switching. Wide operating temperature range (-65°C to 150°C) for varied environments. 1.25 V maximum forward voltage minimizes voltage drop losses in circuits.

9 A peak non-repetitive forward surge current protects against transient spikes. Compact physical size aids in efficient PCB design and manufacturing.

This switching diode is widely used in industrial, electronic component manufacturing, telecommunications equipment, consumer electronics, and power supply circuits where reliable switching performance is vital. It offers a cost-effective solution for circuit designers focusing on fast switching times and small footprint components.

Explore more products in the Switching Diodes category at EnvMart for related diode technology and solutions to meet diverse industrial requirements.

Nexperia Silicon Junction Switching Diode 2-Pin SOD-323 250 mA 200 V BAS321,115
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Frequently Asked Questions

The maximum forward current for the BAS321,115 is 250 mA, allowing efficient signal switching in electronic circuits.

This model features a peak reverse recovery time of 4 nanoseconds, enabling high-speed switching capabilities.

The BAS321,115 can sustain a maximum peak reverse repetitive voltage of 200 V, making it suitable for high voltage applications.

It operates within a wide temperature range from -65°C to 150°C, suitable for various environments.

This model is housed in a compact SOD-323 surface mount package, which is advantageous for space-constrained designs.

The maximum power dissipation for this diode is 250 mW, ensuring stability under typical load conditions.

The maximum forward voltage rating of 1.25 V helps minimize voltage drop within circuits, enhancing overall circuit efficiency.

The dimensions of the BAS321,115 are 1.05 mm in height, 1.8 mm in length, and 1.35 mm in width, facilitating efficient PCB layout.

This diode can withstand a peak non-repetitive forward surge current of 9 A, providing protection against transient spikes.

The BAS321,115 utilizes a single silicon junction diode configuration, which is common for small signal switching applications.

It is widely used in industrial electronics, telecommunications equipment, consumer electronics, and power supply circuits where reliable switching performance is essential.

The low capacitance of the BAS321,115 enhances its switching performance, making it suitable for signal and power rectification roles in electronic assemblies.

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