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onsemi 3 A NPN Transistor 40 V dc Surface Mount SOT-223 Package NJT4031NT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.75mm
Length 6.7mm
Model NJT4031NT1G
Width 3.7mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo 40V dc
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 40V dc
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc 3A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Maximum DC collector current of 3 A allows robust current handling.
  • Collector-emitter voltage (Vceo) rating of 40 V dc ensures suitability for medium power circuits.
  • Compact surface mount SOT-223 package with 4 pins for easy PCB mounting.
  • Minimum DC current gain (hFE) of 100 for reliable amplification performance.
  • Operating temperature range from -55°C to 150°C supports wide environmental conditions.
  • Maximum power dissipation of 2 W enabling moderate power applications.
  • Automotive grade compliance with AEC-Q101 standard for quality assurance.
  • Transistor polarity NPN and single transistor configuration.

Product Description

onsemi NJT4031NT1G is a general purpose NPN bipolar transistor rated for a maximum DC collector current of 3 A and collector-emitter voltage up to 40 V dc. Packaged in a compact 4-pin SOT-223 surface mount design, this transistor is suitable for various electronic component applications including industrial control circuits, power switching, and automotive electronics.

The device features a minimum DC current gain (hFE) of 100, ensuring efficient amplification and switching performance. It supports operation across a wide ambient temperature range from -55°C to 150°C, making it ideal for harsh environments. With maximum power dissipation of 2 W, the NJT4031NT1G is capable of handling moderate power levels in compact circuits.

Key technical dimensions include a length of 6.7 mm, width of 3.7 mm, and height of 1.75 mm, ensuring compatibility with space-constrained PCB layouts. The transistor polarity is NPN, with a single transistor configuration suited for discrete semiconductor applications.

This component meets the automotive AEC-Q101 standard, indicating its reliability and suitability for automotive electronic systems. The robust collector-base and emitter-base voltage ratings, both 40 V and 6 V respectively, along with a transition frequency of 1 MHz, provide versatility in high-frequency switching and amplification tasks.

The onsemi NJT4031NT1G transistor is essential for various industrial, laboratory, automotive, and manufacturing electronics where reliable switching and amplification are needed within compact form factors. It is supplied in reels, ready for automated insertion into manufacturing assembly lines, enhancing production efficiency.

Maximum DC collector current of 3 A allows robust current handling. Collector-emitter voltage (Vceo) rating of 40 V dc ensures suitability for medium power circuits. Compact surface mount SOT-223 package with 4 pins for easy PCB mounting.

Minimum DC current gain (hFE) of 100 for reliable amplification performance. Operating temperature range from -55°C to 150°C supports wide environmental conditions. Maximum power dissipation of 2 W enabling moderate power applications.

Automotive grade compliance with AEC-Q101 standard for quality assurance. Small form factor dimensions: Length 6.7 mm, Width 3.7 mm, Height 1.75 mm. Transistor polarity NPN and single transistor configuration. Explore more Bipolar Transistors and advanced semiconductor components at EnvMart for your electronic design and manufacturing needs.

onsemi 3 A NPN Transistor 40 V dc Surface Mount SOT-223 Package NJT4031NT1G
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Frequently Asked Questions

The maximum DC collector current for the NJT4031NT1G is 3 A, allowing robust current handling for various applications.

The collector-emitter voltage (Vceo) rating is 40 V dc, making it suitable for medium power circuits.

This transistor is packaged in a compact SOT-223 surface mount design with 4 pins for easy PCB mounting.

The minimum DC current gain (hFE) is 100, ensuring reliable amplification performance.

It operates within a temperature range from -55°C to 150°C, supporting wide environmental conditions.

The maximum power dissipation is 2 W, enabling moderate power applications.

This model complies with the AEC-Q101 automotive standard, ensuring quality assurance for automotive applications.

The dimensions of the NJT4031NT1G are 6.7 mm in length, 3.7 mm in width, and 1.75 mm in height.

The transistor polarity is NPN, and it is configured as a single transistor.

The maximum transition frequency (ft) is 1 MHz, providing versatility in high-frequency applications.

The maximum emitter-base voltage (VEBO) is 6 V, which is relevant for its operation in various circuits.

This transistor is suitable for various applications including industrial control circuits, power switching, and automotive electronics.

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