Vishay Isolated TrenchFET 2 Type P-Channel MOSFET, 60 V, 3.1 A, Enhancement Mode, 8-Pin SOIC SI4948BEY-T1-GE3

Vishay SI4948BEY-T1-GE3 is a dual P-Channel MOSFET transistor utilizing isolated TrenchFET 2 technology for enhanced electrical performance and reliable switching in electronic circuits. With a maximum continuous drain current of 3.1 A and a drain-source voltage rating of 60 V, this MOSFET suits numerous applications requiring efficient power control and amplification.

The device comes in an 8-pin SOIC package designed for surface mounting, facilitating compact and automated assembly processes. Its enhancement mode operation with a typical gate charge of 14.5 nC at gate-source voltage enables low gate drive losses, promoting energy efficiency.

Engineered for durability, the MOSFET supports an extensive operating temperature range from -55°C to 175°C, making it suitable for industrial, automotive, and power management applications where thermal stability is crucial.

Additional technical advantages include a low maximum drain-source resistance of 150 mΩ, which contributes to reduced conduction losses and improved efficiency in power circuits. The forward voltage is -0.8 V, and the device allows gate-source voltage swings between -20 V and +20 V, ensuring robust switching characteristics.

The compact dimensions (5 mm length, 4 mm width, and 1.5 mm height) of the SOIC package make it ideal for space-constrained designs. The transistor configuration encapsulates two elements per chip, enabling dual MOSFET operation suitable for complementary and load-driving circuits.

Operates in enhancement mode with a typical gate charge of 14.5 nC at Vgs. Equipped with an 8-pin SOIC surface mount package. Maximum power dissipation of 2.4 W allows reliable performance under standard conditions. Designed for operation in temperature range from -55°C to 175°C.

Low maximum drain-source resistance of 150 mΩ ensures efficient conduction. Forward voltage is -0.8 V with maximum gate-source voltage ratings of -20 V to +20 V. Compact size with dimensions of 5 mm length, 4 mm width, and 1.5 mm height.

Contains two elements per chip for dual MOSFET configuration.

This MOSFET is commonly used in power management, automotive electronic systems, industrial controls, and general-purpose amplification tasks. Its enhanced electrical characteristics and thermal stability enable efficient and reliable operation in harsh environments.

Explore a wide range of Vishay Semiconductors and MOSFET products available at EnvMart for your electronic component needs.