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onsemi General Purpose NPN Transistor, 100 mA Collector Current, 65 V Collector-Emitter Voltage, 3-Pin SOT-23 BC846ALT3G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model BC846ALT3G
Width 2.64mm
Mount Type Surface
Series BC846AL
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 65V
Minimum DC Current Gain hFE 90
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 80V dc
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Maximum DC collector current is 100 mA for efficient switching.
  • Supports collector-emitter voltage up to 65 V in SOT-23 surface mount package.
  • Single transistor configuration with NPN polarity.
  • Maximum power dissipation of 300 mW ensures reliable operation.
  • High transition frequency of 100 MHz suitable for high-speed circuits.
  • Minimum DC current gain (hFE) of 90 provides amplification efficiency.
  • Operating temperature range from -55°C to 150°C for varied environments.
  • Automotive qualified to AEC-Q101 standard for reliability.

Product Description

The onsemi BC846ALT3G is a general purpose NPN bipolar transistor designed primarily for electronic component applications requiring moderate current handling up to 100 mA and voltages up to 65 V.

Housed in a compact SOT-23 package, this transistor is surface mount compatible, making it ideal for modern PCB mounting and assembly processes.

Featuring a maximum collector power dissipation of 300 mW and a high transition frequency of 100 MHz, this transistor supports efficient switching and amplification in high-speed circuits.

The device exhibits a minimum DC current gain (hFE) of 90, ensuring stable amplification performance. Its transistor polarity is NPN with a single transistor configuration.

Operating temperatures range from -55°C for cold environments up to 150°C for high temperature conditions, offering versatility across industrial, automotive, and consumer electronics use cases.

The BC846ALT3G is automotive qualified per the AEC-Q101 standard, ensuring reliability and durability in automotive and demanding electronic applications.

Typical applications include signal amplification, switching circuits, and general purpose transistor roles in industrial electronics, automotive systems, laboratory equipment, and consumer devices.

Maximum collector current: 100 mA. Collector-emitter voltage max: 65 V. Power dissipation: 300 mW. Transition frequency: 100 MHz. Surface mount SOT-23 package. Operating temperature: -55°C to 150°C. Automotive AEC-Q101 qualification.

Compact dimensions: Length 3.04 mm, Width 2.64 mm, Height 1.11 mm. This onsemi transistor supports various electronic and industrial applications requiring reliable small-signal switching and amplification. Explore more high-quality semiconductors and Bipolar Transistors at EnvMart for your electronic design needs.

onsemi General Purpose NPN Transistor, 100 mA Collector Current, 65 V Collector-Emitter Voltage, 3-Pin SOT-23 BC846ALT3G
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Frequently Asked Questions

The maximum DC collector current for the BC846ALT3G is 100 mA.

This model supports a maximum collector-emitter voltage of 65 V.

It has a maximum power dissipation of 300 mW, ensuring reliable operation.

The transition frequency of this transistor is 100 MHz, suitable for high-speed circuits.

The dimensions of the SOT-23 package are 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.

It operates within a temperature range of -55°C to 150°C, making it versatile for various environments.

Yes, the BC846ALT3G is automotive qualified according to the AEC-Q101 standard.

The minimum DC current gain (hFE) for this model is 90, providing efficient amplification.

This model features a single transistor configuration with NPN polarity.

The maximum emitter-base voltage (VEBO) for this transistor is 6 V.

Typical applications include signal amplification, switching circuits, and general purpose roles in industrial and automotive systems.

The maximum collector-base voltage (VCBO) is rated at 80 V DC.

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