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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 21.77mm |
| Length | 5.2mm |
| Model | MPSA05RA |
| Width | 4.19mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-92 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 60V |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 4V |
| Maximum Collector Base Voltage VCBO | 60V |
| Maximum Power Dissipation Pd | 625mW |
| Maximum DC Collector Current Idc | 500mA |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
onsemi MPSA05RA is a small-signal NPN Bipolar Junction Transistor designed for general purpose low power amplification and switching applications.
This transistor supports a maximum continuous collector current of 500 mA and can tolerate a collector-emitter voltage of up to 60 V, making it ideal for a variety of electronic circuits requiring robust performance.
The component comes in a compact, three-pin TO-92 package suitable for through-hole PCB mounting, offering ease of assembly and space-saving design. With a minimum DC current gain (hFE) of 100, it delivers effective amplification at frequencies reaching 100 MHz, suitable for high-speed applications.
The device is rated for a maximum power dissipation of 625 mW allowing it to handle moderate thermal loads without degradation. Its maximum emitter-base voltage threshold is 4 V and it features a maximum collector-base voltage of 60 V, assuring stability and reliability within these electrical parameters.
Operating temperature can reach up to 150°C, permitting use in elevated temperature environments such as automotive or industrial control systems. Typical applications include analog switching, driver stages, and amplification blocks in various industrial, consumer electronics, and power control systems.
Rated collector current of 500 mA for reliable low-power switching applications. Capable of withstanding collector-emitter voltage up to 60 V. Maximum power dissipation rated at 625 mW to ensure stable performance under thermal load.
NPN polarity configuration suitable for various amplification and switching circuits. Minimum DC current gain (hFE) of 100 for efficient signal amplification. Operates at frequencies up to 100 MHz, facilitating high-speed switching uses.
Through-hole mounting type with compact TO-92 package dimensions. Maximum operating temperature of 150°C ensures durability in demanding environments. This transistor is a reliable choice for designing efficient, small form-factor electronic circuits in industrial, HVAC, manufacturing, and consumer electronics sectors.
Explore more from onsemi transistor range for high-quality semiconductor solutions on EnvMart.
Explore more products in our Bipolar Transistors category.
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