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onsemi Transistor, 500 mA NPN, 60 V, 3-Pin TO-92, Maximum Power 625 mW MPSA05RA

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 21.77mm
Length 5.2mm
Model MPSA05RA
Width 4.19mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-92
Pin Count 3
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 100
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 4V
Maximum Collector Base Voltage VCBO 60V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc 500mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Rated collector current of 500 mA for reliable low-power switching applications.
  • Capable of withstanding collector-emitter voltage up to 60 V.
  • Maximum power dissipation rated at 625 mW to ensure stable performance under thermal load.
  • NPN polarity configuration suitable for various amplification and switching circuits.
  • Minimum DC current gain (hFE) of 100 for efficient signal amplification.
  • Operates at frequencies up to 100 MHz, facilitating high-speed switching uses.
  • Through-hole mounting type with compact TO-92 package dimensions of 21.77 mm height, 5.2 mm length, and 4.19 mm width.
  • Maximum operating temperature of 150°C ensures durability in demanding environments.

Product Description

onsemi MPSA05RA is a small-signal NPN Bipolar Junction Transistor designed for general purpose low power amplification and switching applications.

This transistor supports a maximum continuous collector current of 500 mA and can tolerate a collector-emitter voltage of up to 60 V, making it ideal for a variety of electronic circuits requiring robust performance.

The component comes in a compact, three-pin TO-92 package suitable for through-hole PCB mounting, offering ease of assembly and space-saving design. With a minimum DC current gain (hFE) of 100, it delivers effective amplification at frequencies reaching 100 MHz, suitable for high-speed applications.

The device is rated for a maximum power dissipation of 625 mW allowing it to handle moderate thermal loads without degradation. Its maximum emitter-base voltage threshold is 4 V and it features a maximum collector-base voltage of 60 V, assuring stability and reliability within these electrical parameters.

Operating temperature can reach up to 150°C, permitting use in elevated temperature environments such as automotive or industrial control systems. Typical applications include analog switching, driver stages, and amplification blocks in various industrial, consumer electronics, and power control systems.

Rated collector current of 500 mA for reliable low-power switching applications. Capable of withstanding collector-emitter voltage up to 60 V. Maximum power dissipation rated at 625 mW to ensure stable performance under thermal load.

NPN polarity configuration suitable for various amplification and switching circuits. Minimum DC current gain (hFE) of 100 for efficient signal amplification. Operates at frequencies up to 100 MHz, facilitating high-speed switching uses.

Through-hole mounting type with compact TO-92 package dimensions. Maximum operating temperature of 150°C ensures durability in demanding environments. This transistor is a reliable choice for designing efficient, small form-factor electronic circuits in industrial, HVAC, manufacturing, and consumer electronics sectors.

Explore more from onsemi transistor range for high-quality semiconductor solutions on EnvMart.

Explore more products in our Bipolar Transistors category.

onsemi Transistor, 500 mA NPN, 60 V, 3-Pin TO-92, Maximum Power 625 mW MPSA05RA
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Frequently Asked Questions

The maximum collector current rating for this transistor is 500 mA, making it suitable for low-power switching applications.

It can withstand a maximum collector-emitter voltage of 60 V, ensuring reliable operation in various electronic circuits.

The maximum power dissipation for this transistor is rated at 625 mW, allowing it to handle moderate thermal loads effectively.

This model comes in a compact TO-92 package, which is designed for through-hole mounting.

The minimum DC current gain (hFE) for this transistor is 100, providing efficient signal amplification.

The maximum operating temperature is 150°C, allowing it to function in demanding environments.

It operates at frequencies up to 100 MHz, facilitating high-speed switching applications.

The dimensions of this transistor are 21.77 mm in height, 5.2 mm in length, and 4.19 mm in width.

This transistor features an NPN polarity configuration, making it suitable for various amplification and switching circuits.

The maximum emitter-base voltage (VEBO) for the MPSA05RA is 4 V, ensuring stability in its operation.

This transistor is suitable for applications such as analog switching, driver stages, and amplification blocks in various electronic systems.

The MPSA05RA has a pin count of 3, designed for easy integration into circuits.

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