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onsemi Small Signal NPN Transistor 600 mA 40 V 3-Pin TO-92 2N4401TAR

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 21.77mm
Length 5.2mm
Model 2N4401TAR
Width 4.19mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 20
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 60V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc 600mA
Transistor Configuration Single
Maximum Transition Frequency ft 250MHz
onsemi 2N4401TA NPN Transistor, 600 mA, 40 V, 3-Pin TO-92Brand onsemi

Key Features

  • This transistor offers a maximum power dissipation of 625 mW.
  • It supports a maximum collector base voltage of 60 V.
  • Minimum DC current gain (hFE) is 20, suitable for amplification purposes.
  • Operating temperature range is from -55°C to 150°C, ensuring robust performance in diverse environments.
  • Maximum transition frequency is 250 MHz for high-speed switching.
  • This product complies with no special standards or automotive applications.
  • Pin count is 3, configurable as a single transistor device.

Product Description

onsemi 2N4401TAR is a small signal NPN transistor engineered for various electronic applications requiring efficient switching and amplification. Rated for a maximum DC collector current of 600 mA and a collector emitter voltage of 40 V, it is housed in a 3-pin TO-92 package that supports through-hole mounting.

This transistor supports a maximum power dissipation of 625 mW along with a maximum collector base voltage of 60 V, accommodating diverse circuit needs with reliable performance.

The minimum DC current gain (hFE) of 20 and a high maximum transition frequency of 250 MHz enables high-frequency and fast switching applications. Its operating temperature range (-55°C to 150°C) ensures stability in harsh industrial, laboratory, and commercial environments.

The device's compact dimensions (21.77 mm height, 5.2 mm length, 4.19 mm width) and single transistor configuration allow easy integration into PCB layouts, making it ideal for electronic circuits, power regulation, and switching roles.

Maximum DC collector current of 600 mA supports moderate load applications. Collector emitter voltage up to 40 V enables efficient control. Through-hole TO-92 package facilitates mounting versatility. Wide operating temperature range suitable for industrial and laboratory use.

High transition frequency allows use in fast switching circuits. Compact size for space-constrained electronics projects. Reliable NPN polarity for common transistor applications.

Widely used in electronic design, prototyping, and manufacturing, the onsemi 2N4401TAR transistor is a dependable choice for power and signal switching in industrial, commercial, and hobbyist electronics.

Explore additional Bipolar Transistors and semiconductor components in the Electronics & Electricals category at EnvMart.

onsemi Small Signal NPN Transistor 600 mA 40 V 3-Pin TO-92 2N4401TAR
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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) for this model is 40 V.

This transistor has a maximum power dissipation of 625 mW.

The operating temperature range for this model is from -55°C to 150°C.

The minimum DC current gain (hFE) for this transistor is 20, making it suitable for amplification purposes.

This model has a maximum transition frequency of 250 MHz, suitable for high-speed switching applications.

The dimensions of this transistor are 21.77 mm in height, 5.2 mm in length, and 4.19 mm in width.

This transistor supports through-hole mounting, making it versatile for various applications.

The pin count for this model is 3, configured as a single transistor device.

The maximum DC collector current (Idc) for this model is 600 mA.

The maximum collector base voltage (Vcbo) for this transistor is 60 V.

This transistor is widely used in electronic design, prototyping, and manufacturing for power and signal switching.

The transistor polarity for this model is NPN, suitable for common transistor applications.

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