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onsemi 3 A NPN Transistor, 50 V, 3-Pin PCP Surface Mount 2SD1624S-TD-E

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.5mm
Length 4.5mm
Model 2SD1624S-TD-E
Width 4.5mm
Mount Type Surface
Series 2SD1624S
Maximum Operating Temperature 150°C
Package Type PCP
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 35
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 60V
Maximum Power Dissipation Pd 1.5W
Maximum DC Collector Current Idc 3A
Transistor Configuration Single
Maximum Transition Frequency ft 150MHz
Diodes Inc ZXTN4000ZTA NPN Transistor, 1 A, 60 V, 3-Pin SOT-89Brand DiodesZetex

Key Features

  • The transistor supports a maximum DC collector current of 3 A.
  • It features a single NPN transistor configuration suitable for general purpose use.
  • The maximum power dissipation is rated at 1.5 W for efficient thermal management.
  • It operates over a temperature range of -55°C to 150°C.
  • The package type is PCP with a compact 3-pin design for surface mounting.
  • The transistor has a maximum transition frequency of 150 MHz, supporting high-speed switching.
  • The device includes a minimum DC current gain (hFE) of 35 for amplification efficiency.
  • Mechanical dimensions include 4.5 mm length, 4.5 mm width, and 1.5 mm height.

Product Description

onsemi 2SD1624S-TD-E is a general purpose NPN transistor designed for surface mount technology applications. It supports a maximum DC collector current of 3 A and a collector emitter voltage rating of 50 V, housed in a PCP package with a 3-pin configuration. This transistor is ideal for use in electronic circuits requiring reliable switching and amplification capabilities within a wide temperature range from -55°C to 150°C.

The device features a single transistor configuration with a minimum DC current gain (hFE) of 35 and a maximum power dissipation capacity of 1.5 W, ensuring balanced performance under varying electrical loads. With a high maximum transition frequency of 150 MHz, it is well suited to high-speed switching tasks in industrial and commercial electronic assemblies.

Physical dimensions are compact, measuring 4.5 mm in length and width with a height of 1.5 mm, facilitating efficient packaging on printed circuit boards. The transistor's maximum collector base voltage and emitter base voltage ratings are 60 V and 6 V, respectively, supporting robust operation in demanding applications.

This transistor is surface mountable, making it suitable for automated PCB assembly lines in manufacturing environments. It is widely applicable in electronics, power control, and amplification systems across laboratory, industrial, and commercial sectors.

The transistor supports a maximum collector current of 3 A for moderate load applications. It operates safely up to 150°C allowing for usage in high-temperature environments. Its compact PCP 3-pin package facilitates integration in dense PCB layouts.

With a gain between 35 and higher, it provides effective signal amplification. Designed for single NPN transistor usage with 50 V collector emitter voltage rating. Its high transition frequency of 150 MHz suits fast switching electronics.

It is ideal for use in automotive, industrial, and commercial electronic devices.

Choose the onsemi 2SD1624S-TD-E transistor for dependable, high-performance switching and amplification in surface mount electronic circuits. Explore our extensive catalog for more onsemi semiconductor components and Bipolar Transistors tailored for your technical needs.

onsemi 3 A NPN Transistor, 50 V, 3-Pin PCP Surface Mount 2SD1624S-TD-E
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Frequently Asked Questions

The maximum DC collector current for this model is 3 A.

The maximum collector emitter voltage rating is 50 V.

It operates over a temperature range of -55°C to 150°C.

This transistor is housed in a PCP package with a 3-pin configuration.

The maximum power dissipation capacity is rated at 1.5 W.

The minimum DC current gain (hFE) is 35.

The maximum transition frequency is 150 MHz, suitable for high-speed switching applications.

The dimensions are 4.5 mm in length, 4.5 mm in width, and 1.5 mm in height.

It features a single NPN transistor configuration.

The maximum emitter base voltage rating is 6 V.

This transistor is suitable for use in automotive, industrial, and commercial electronic devices.

The country of origin for this transistor is India.

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