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Toshiba N-Channel MOSFET, 72 A, 80 V Enhancement Mode, 3-Pin TO-220 TK72A08N1,S4X(S
Specifications
| Country of Origin | China |
|---|---|
| Brand | Toshiba |
| Height | 15mm |
| Length | 10mm |
| Model | TK72A08N1,S4X(S |
| Width | 4.5mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 72A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 4.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 81nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Built in a TO-220 package with through-hole mounting for easy PCB assembly.
- Enhancement mode channel ensures efficient conduction and switching.
- Maximum power dissipation of 45 watts supports high-power applications.
- Typical gate charge of 81 nC at Vgs facilitates fast switching.
- Maximum gate-source voltage rating is ±20 volts for reliable operation.
- Maximum drain-source resistance of 4.5 milliohms reduces conduction losses.
- Designed for operating temperatures up to 150 degrees Celsius.
- Three-pin configuration in a compact 15 mm height, 10 mm length, and 4.5 mm width form factor.
Product Description
The Toshiba TK72A08N1,S4X(S is a high-performance N-Channel MOSFET designed for semiconductor applications requiring strong current handling and voltage resistance.
This device features a maximum continuous drain current of 72 amperes and a maximum drain-source voltage rating of 80 volts, making it suitable for power electronics and switching circuits.
Housed in a TO-220 package with a through-hole mount type, the transistor offers convenient integration into various PCB designs. Its enhancement mode channel type ensures efficient control and switching dynamics.
The device supports a maximum power dissipation of 45 watts, allowing for sustained performance under demanding thermal conditions, with an operating temperature tolerance up to 150 degrees Celsius.
Key electrical characteristics include a maximum drain-source resistance of 4.5 milliohms, which minimizes energy loss during conduction, and a typical gate charge of 81 nanocoulombs at Vgs, enabling fast switching speeds suitable for industrial conversions and power management.
Built in a TO-220 three-pin package for standard mounting. Maximum continuous drain current of 72 A for heavy-duty applications. Maximum drain-source voltage of 80 V for versatility in medium-voltage circuits. Low drain-source resistance of 4.5 mΩ to enhance efficiency.
Wide gate-source voltage range of ±20 V for robust gate control. Supports operating temperatures up to 150°C for industrial use. Compact physical dimensions facilitate PCB board space optimization. This MOSFET is ideal for use in power electronics, industrial control systems, and electronic equipment requiring reliable switching and amplification performance.
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Frequently Asked Questions
The maximum continuous drain current for this model is 72 amperes, making it suitable for heavy-duty applications.
This MOSFET has a maximum drain-source voltage rating of 80 volts, providing versatility in medium-voltage circuits.
It supports a maximum power dissipation of 45 watts, allowing for sustained performance under demanding thermal conditions.
The physical dimensions of this unit are 15 mm in height, 10 mm in length, and 4.5 mm in width.
It is housed in a TO-220 package, which allows for through-hole mounting and easy PCB assembly.
The typical gate charge at Vgs for this model is 81 nanocoulombs, facilitating fast switching speeds.
The maximum gate-source voltage rating for this MOSFET is ±20 volts, ensuring reliable operation.
This unit features a maximum drain-source resistance of 4.5 milliohms, which helps reduce conduction losses.
It is designed to operate at temperatures up to 150 degrees Celsius, making it suitable for industrial applications.
This MOSFET has a three-pin configuration, which is standard for its package type.
This model utilizes an enhancement mode N-channel configuration for efficient conduction and switching.
The country of origin for this MOSFET is China.
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