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onsemi Small Signal NPN Bipolar Transistor 200 mA, 40 V, 3-Pin TO-92 2N3904BU

Category Transistor Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 18.03mm
Length 5.2mm
Model 2N3904BU
Width 4.19mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 15
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 60V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc 200mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
Fairchild 2N3904BU NPN Bipolar Transistor, 200 mA, 40 V, 3-Pin TO-92Brand Fairchild Semiconductor

Key Features

  • Maximum collector current of 200 mA supports moderate power applications.
  • Maximum collector-emitter voltage rating of 40 V enables reliable switching performance.
  • Transistor configured as single NPN type suitable for amplified circuits.
  • Package type TO-92 with through-hole mount offers easy PCB integration.
  • Maximum power dissipation of 625 mW supports small signal operations.
  • Operating temperature range from -55°C to 150°C suits diverse environments.
  • High transition frequency up to 100 MHz enables high-speed switching.
  • Compact dimensions of 18.03 mm height, 5.2 mm length, and 4.19 mm width optimize board space.

Product Description

onsemi 2N3904BU is a small signal NPN bipolar transistor rated for a maximum collector current of 200 mA and maximum collector-emitter voltage of 40 V. Housed in a 3-pin TO-92 package with through-hole mount configuration, it offers a reliable and compact solution for various electronic amplification and switching circuits.

This transistor features a maximum power dissipation of 625 milliwatts and a transition frequency reaching 100 MHz. It performs efficiently within a wide operating temperature range from -55°C to 150°C, making it suitable for industrial, commercial, and laboratory electronics applications. The transistor's minimum DC current gain (hFE) of 15 supports adequate signal amplification in small-signal circuits.

Its compact dimensions - 18.03 mm in height, 5.2 mm length, and 4.19 mm width - facilitate efficient PCB design and assembly. The single configuration NPN transistor simplifies circuit designs involving switching and amplification.

Typical uses include signal amplification, switching tasks in electronic devices, and integration in electronic control systems. The TO-92 package type with through-hole mount ensures ease of installation and reliable mechanical stability on PCBs.

Maximum collector current of 200 mA supports moderate power applications. Maximum collector-emitter voltage of 40 V ensures effective switching capability. Single NPN transistor configuration for versatile applicability.

TO-92 package with through-hole mount for easy assembly. Maximum power dissipation of 625 mW suitable for small signal usage. Wide temperature range from -55°C to 150°C for flexible operating conditions. High transition frequency of 100 MHz enables fast signal response.

Compact dimensions for efficient PCB space usage. Minimum current gain (hFE) of 15 supports reliable amplification. Designed for use in industrial, laboratory, and commercial electronics. Explore a broad range of semiconductors and discrete Transistors at EnvMart for your electronic component sourcing needs.

onsemi Small Signal NPN Bipolar Transistor 200 mA, 40 V, 3-Pin TO-92 2N3904BU
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Frequently Asked Questions

The maximum collector current for the 2N3904BU is 200 mA, making it suitable for moderate power applications.

This model has a maximum collector-emitter voltage rating of 40 V, which ensures reliable switching performance.

The maximum transition frequency of this transistor is 100 MHz, enabling high-speed switching capabilities.

The operating temperature range for the 2N3904BU is from -55°C to 150°C, allowing it to function in diverse environments.

It is housed in a 3-pin TO-92 package with a through-hole mount configuration, facilitating easy PCB integration.

The maximum power dissipation for this model is 625 mW, which is suitable for small signal operations.

The minimum DC current gain (hFE) for the 2N3904BU is 15, which supports adequate signal amplification in small-signal circuits.

This model has compact dimensions of 18.03 mm in height, 5.2 mm in length, and 4.19 mm in width, optimizing board space.

The 2N3904BU is configured as a single NPN transistor, making it versatile for various applications.

Typical applications include signal amplification and switching tasks in electronic devices and control systems.

The maximum emitter-base voltage (VEBO) for the 2N3904BU is 6 V, which is important for its operation in circuits.

The 2N3904BU is manufactured in India, which is noted as its country of origin.

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