$1.95
$1.89
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
onsemi QFET N-Channel MOSFET 9 A 500 V Enhancement 3-Pin TO-220 FQPF9N50CF
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.07mm |
| Length | 10.36mm |
| Model | FQPF9N50CF |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 9A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 850mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 44W |
| Typical Gate Charge Qg @ Vgs | 28nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.4V |
| N-Channel MOSFET Transistor, 9 A, 500 V, 3-Pin TO-220F Fairchild FQPF9N50CBrand | Fairchild Semiconductor |
Key Features
- Maximum continuous drain current of 9 amperes for reliable high-current applications.
- Maximum drain-source voltage rating of 500 volts ensures high-voltage tolerance.
- Low maximum drain-source resistance of 850 milliohms reduces on-state losses and improves efficiency.
- Through-hole mount with 3-pin TO-220 package supports robust mechanical and thermal handling.
- Typical gate charge of 28 nanocoulombs at gate-source voltage for efficient switching.
- Wide operating temperature range from -55°C to +150°C for industrial use.
- Maximum power dissipation of 44 watts suitable for demanding power electronics.
- Forward voltage of 1.4 volts and maximum gate-source voltages of -30 to +30 volts.
Product Description
onsemi FQPF9N50CF is a high-performance QFET N-Channel MOSFET designed for power electronics applications requiring efficient switching and low conduction losses. Featuring a maximum continuous drain current of 9A and a maximum drain-source voltage of 500V, this device operates in enhancement mode and comes housed in a durable 3-pin TO-220 package suitable for through-hole mounting.
The device offers a low maximum drain-source resistance (Rds) of 850 milliohms which contributes to reduced on-state losses and greater efficiency in power supply circuits, DC-DC converters, power factor correction modules, lighting ballasts, and motion control systems. With a typical gate charge (Qg) of 28 nanocoulombs at the gate-source voltage, it enables fast switching speeds with minimal power dissipation.
This MOSFET is capable of dissipating up to 44 watts of power, making it fitting for various industrial and commercial electronics where thermal handling is critical. It supports a wide operating temperature range from -55°C to 150°C, enhancing reliability in harsh conditions.
Physical dimensions of approximately 16.07 mm in height, 10.36 mm in length, and 4.9 mm in width provide a compact footprint in electronic assemblies. Its maximum gate-source voltage tolerance between -30V and +30V and forward voltage of 1.4V further optimize device performance and protect against gate overvoltage.
This onsemi QFET MOSFET upgrade allows power electronics designers to achieve improved efficiency and reliability. It is particularly suited for industrial, laboratory, manufacturing, HVAC, and lighting applications that demand robust and efficient N-Channel MOSFET components.
Maximum continuous drain current of 9 amperes. Maximum drain-source voltage rating of 500 volts. Low on-resistance of 850 milliohms. Through-hole mount in 3-pin TO-220 package. Typical gate charge of 28 nanocoulombs facilitates efficient switching.
Wide temperature operation range from -55°C to +150°C. Maximum power dissipation of 44 watts. Compact dimensions for versatile electronic assembly. Explore the onsemi brand and this FQPF9N50CF model in EnvMart for premium Semiconductor components tailored for advanced electronics and power management solutions.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 9 amperes.
This MOSFET has a maximum drain-source voltage rating of 500 volts.
The maximum power dissipation for this unit is 44 watts.
The typical gate charge at gate-source voltage for this model is 28 nanocoulombs.
The dimensions of this model are approximately 16.07 mm in height, 10.36 mm in length, and 4.9 mm in width.
It comes in a 3-pin TO-220 package suitable for through-hole mounting.
The maximum gate-source voltage tolerance for this MOSFET is between -30 volts and +30 volts.
This unit operates within a wide temperature range from -55°C to +150°C.
The maximum drain-source resistance for this MOSFET is 850 milliohms.
This model is suitable for power supply circuits, DC-DC converters, power factor correction modules, lighting ballasts, and motion control systems.
This device features an N-channel configuration and operates in enhancement mode.
The country of origin for this MOSFET is India.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$6.78
$6.57
-3%
New
$23.16
$20.22
-12.7%
New
Recently Viewed Products
$1.95
$1.89
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent