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onsemi Small Signal NPN Transistor 2 A, 60 V, 500 mW Power Dissipation, 3-Pin SOT-23 FSB560A

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onsemi Small Signal NPN Transistor 2 A, 60 V, 500 mW Power Dissipation, 3-Pin SOT-23 FSB560A

Name: onsemi Small Signal NPN Transistor 2 A, 60 V, 500 mW Power Dissipation, 3-Pin SOT-23 FSB560A
Brand: onsemi
SKU: 374626
Price: 0.2 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.12mm
Length	2.92mm
Model	FSB560A
Width	1.4mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	60V
Minimum DC Current Gain hFE	100
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	80V
Maximum Power Dissipation Pd	500mW
Maximum DC Collector Current Idc	2A
Transistor Configuration	Single
Maximum Transition Frequency ft	75MHz

Key Features

Designed for surface mount applications with a compact SOT-23 package.
Maximum power dissipation of 500 mW ensures reliable operation.
High DC current gain (hFE) minimum of 100 for efficient amplification.
Wide operating temperature range from -55°C to 150°C.
Maximum transition frequency of 75 MHz supports high-speed switching.
Collector base voltage rating of 80 V and emitter base voltage of 5 V.
Single transistor configuration with NPN polarity suitable for various electronic circuits.
Not designed for automotive standard applications.

Product Description

onsemi FSB560A is a small signal NPN bipolar junction transistor designed for surface mount applications in electronic circuits requiring up to 2 A collector current and voltages up to 60 V. Its compact 3-pin SOT-23 package facilitates efficient PCB integration with reliable thermal performance and minimal space usage.

This transistor features a maximum power dissipation of 500 mW, allowing it to handle moderate power without thermal issues in typical industrial and consumer electronic devices. With a minimum DC current gain of 100, it provides effective amplification suitable for signal processing and switching tasks.

The device operates safely across a wide temperature range spanning from -55°C to 150°C, making it well suited for industrial and laboratory environments exposed to harsh conditions. Its transition frequency of 75 MHz supports high-speed switching applications commonly found in communication and control circuits.

Electrical characteristics include a maximum collector base voltage of 80 V and emitter base voltage of 5 V, providing versatility across various circuit designs requiring precise control and voltage handling. The physical dimensions of length 2.92 mm, width 1.4 mm, and height 1.12 mm enable compact assembly and integration into equipment.

This single NPN transistor configuration is ideal for numerous applications in industrial electronics, power management, signal amplification, and other fields that demand reliable, small footprint semiconductor solutions.

Designed for surface mount technology with the popular SOT-23 package. Handles continuous collector current up to 2 A for robust performance. Moderate power dissipation rating supports diverse industrial and consumer devices.

Wide operational temperature range ensures durability in harsh conditions. High gain and switching frequency make it suitable for signal processing. Physical dimensions allow easy PCB integration and minimal space use. NPN transistor polarity suits many transistor amplifier and switching circuits.

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