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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 29.33mm |
| Length | 10.1mm |
| Model | BD239CTU |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 115V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Power Dissipation Pd | 30W |
| Maximum DC Collector Current Idc | 2A |
| Transistor Configuration | Single |
onsemi BD239CTU is a high-reliability power NPN Bipolar Junction Transistor designed for amplification and switching in medium power electronic applications. It supports a maximum DC collector current of 2 A and a maximum collector-emitter voltage of 115 V, making it suitable for many industrial and electronic control circuits. The device comes housed in a TO-220 package with 3 through-hole pins for robust mounting and thermal management.
This transistor features a minimum current gain (hFE) of 40 ensuring good amplification performance, a maximum power dissipation rating of 30 watts for handling considerable electrical load while maintaining stable operation, and can operate reliably up to 150°C maximum temperature. It has a maximum collector-base voltage (VCBO) of 100 V and an emitter-base voltage (VEBO) of 5 V, providing ample headroom for various circuit configurations.
The transistor’s compact physical dimensions of 10.1 mm length, 29.33 mm height, and 4.7 mm width enable easy integration in electronic assemblies. It is ideal for industrial, laboratory, manufacturing, and power electronics uses where controlled switching or amplification is necessary.
Designed for power amplification and switching applications. Maximum power dissipation of 30 watts ensures thermal reliability. Minimum DC current gain (hFE) of 40 for effective signal amplification. Capable of operating up to a maximum temperature of 150°C.
Includes 3 pins with a transistor configuration of a single NPN device. Package type TO-220 supports easy mounting on heat sinks. Pins configured for through hole mounting for circuit board compatibility. Maximum collector-base voltage of 100 V and emitter-base voltage of 5 V.
Compact dimensions: length 10.1 mm, height 29.33 mm, width 4.7 mm. Suitable for various electronic circuits requiring medium power bipolar transistors. Explore a broad range of Bipolar Transistors and power semiconductors at EnvMart for your project and industrial needs.
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