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onsemi Power NPN Transistor 2A 115V TO-220 3-Pin Through Hole BD239CTU

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 29.33mm
Length 10.1mm
Model BD239CTU
Width 4.7mm
Mount Type Through Hole
Maximum Operating Temperature 150°C
Package Type TO-220
Pin Count 3
Maximum Collector Emitter Voltage Vceo 115V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 100V
Maximum Power Dissipation Pd 30W
Maximum DC Collector Current Idc 2A
Transistor Configuration Single

Key Features

  • Designed for power amplification and switching applications.
  • Maximum power dissipation of 30 watts ensures thermal reliability.
  • Minimum DC current gain (hFE) of 40 for effective signal amplification.
  • Capable of operating up to a maximum temperature of 150°C.
  • Includes 3 pins with a transistor configuration of a single NPN device.
  • Package type TO-220 supports easy mounting on heat sinks.
  • Pins configured for through hole mounting for circuit board compatibility.
  • Maximum collector-base voltage of 100 V and emitter-base voltage of 5 V.

Product Description

onsemi BD239CTU is a high-reliability power NPN Bipolar Junction Transistor designed for amplification and switching in medium power electronic applications. It supports a maximum DC collector current of 2 A and a maximum collector-emitter voltage of 115 V, making it suitable for many industrial and electronic control circuits. The device comes housed in a TO-220 package with 3 through-hole pins for robust mounting and thermal management.

This transistor features a minimum current gain (hFE) of 40 ensuring good amplification performance, a maximum power dissipation rating of 30 watts for handling considerable electrical load while maintaining stable operation, and can operate reliably up to 150°C maximum temperature. It has a maximum collector-base voltage (VCBO) of 100 V and an emitter-base voltage (VEBO) of 5 V, providing ample headroom for various circuit configurations.

The transistor’s compact physical dimensions of 10.1 mm length, 29.33 mm height, and 4.7 mm width enable easy integration in electronic assemblies. It is ideal for industrial, laboratory, manufacturing, and power electronics uses where controlled switching or amplification is necessary.

Designed for power amplification and switching applications. Maximum power dissipation of 30 watts ensures thermal reliability. Minimum DC current gain (hFE) of 40 for effective signal amplification. Capable of operating up to a maximum temperature of 150°C.

Includes 3 pins with a transistor configuration of a single NPN device. Package type TO-220 supports easy mounting on heat sinks. Pins configured for through hole mounting for circuit board compatibility. Maximum collector-base voltage of 100 V and emitter-base voltage of 5 V.

Compact dimensions: length 10.1 mm, height 29.33 mm, width 4.7 mm. Suitable for various electronic circuits requiring medium power bipolar transistors. Explore a broad range of Bipolar Transistors and power semiconductors at EnvMart for your project and industrial needs.

onsemi Power NPN Transistor 2A 115V TO-220 3-Pin Through Hole BD239CTU
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for the BD239CTU is 115 V.

This model can handle a maximum DC collector current of 2 A.

The maximum power dissipation rating for this transistor is 30 watts.

The minimum DC current gain (hFE) for the BD239CTU is 40.

The dimensions of this transistor are 10.1 mm in length, 29.33 mm in height, and 4.7 mm in width.

The BD239CTU can operate reliably at a maximum temperature of 150°C.

This transistor comes in a TO-220 package type, which supports easy mounting on heat sinks.

The BD239CTU has 3 pins configured for through-hole mounting.

The maximum collector-base voltage (VCBO) for this transistor is 100 V.

The maximum emitter-base voltage (VEBO) for the BD239CTU is 5 V.

The BD239CTU is an NPN bipolar junction transistor designed for power amplification and switching applications.

The BD239CTU is manufactured in India.

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