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onsemi 500 mA NPN Bipolar Transistor, 40 V, 16-Pin SOIC Surface Mount MMPQ2222A
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 2mm |
| Model | MMPQ2222A |
| Width | 1.25mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 16 |
| Maximum Collector Emitter Voltage Vceo | 40V |
| Minimum DC Current Gain hFE | 75 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 75V |
| Maximum Power Dissipation Pd | 1W |
| Maximum DC Collector Current Idc | 500mA |
| Transistor Configuration | Isolated |
| Maximum Transition Frequency ft | 300MHz |
Key Features
- This transistor supports a maximum collector-emitter voltage of 40 V.
- It features an isolated transistor configuration suitable for diverse circuit requirements.
- The maximum DC current rating is 500 mA, with a power dissipation of 1 W.
- The device operates over a wide temperature range from -55°C to 150°C.
- Its transition frequency is up to 300 MHz, ideal for high-frequency applications.
- The minimum DC current gain (hFE) is 75, ensuring efficient signal amplification.
- The package dimensions are 2 mm in length, 1.25 mm in width, and 1 mm in height.
- Equipped with 16 pins for enhanced connectivity in circuit designs.
Product Description
onsemi MMPQ2222A is a high-performance NPN bipolar transistor designed for surface mounting in electronic circuits, encapsulated in a 16-pin SOIC package. With a maximum collector-emitter voltage rating of 40 V and maximum DC collector current of 500 mA, it caters to various industrial and electronic applications requiring reliable switching and amplification capabilities.
The transistor configuration is isolated, ensuring minimal interference and robust performance. It offers a maximum power dissipation of 1 W, supporting durability in operation up to a maximum operating temperature of 150°C and as low as -55°C, making it suitable for harsh industrial, automotive, and aerospace environments.
Featuring a minimum DC current gain (hFE) of 75 and a transition frequency of 300 MHz, the MMPQ2222A supports high-frequency operations in communication and signal processing tasks. The 16-pin configuration enhances connectivity options for complex circuit integration. Its compact dimensions (length 2 mm, width 1.25 mm, height 1 mm) allow for efficient PCB layout minimizing space consumption.
This transistor from onsemi does not specifically carry automotive certification but is widely used in industrial, laboratory, manufacturing, and commercial electronic applications. It is ideal for use in switching devices, amplifiers, and other discrete semiconductor needs.
This device supports a maximum collector-emitter voltage of 40 V. Maximum collector current capacity is 500 mA. Power dissipation capability of 1 W ensures stable operation. Wide operating temperature range from -55°C to 150°C.
High transition frequency of 300 MHz for fast switching. Minimum DC current gain (hFE) of 75 guarantees efficient signal amplification. Surface mount SOIC package with 16 pins enhances PCB integration. Compact physical size with 2 mm length, 1.25 mm width, and 1 mm height.
Explore this product and others in Bipolar Transistors at EnvMart for reliable electronic components tailored to industrial and commercial uses.
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Frequently Asked Questions
The maximum collector-emitter voltage of this model is 40 V.
It has a maximum DC collector current rating of 500 mA.
This transistor can dissipate up to 1 W of power.
The MMPQ2222A operates over a wide temperature range from -55°C to 150°C.
The transition frequency is up to 300 MHz, making it suitable for high-frequency applications.
The minimum DC current gain (hFE) is 75, which ensures efficient signal amplification.
It is packaged in a 16-pin SOIC surface mount configuration.
The dimensions are 2 mm in length, 1.25 mm in width, and 1 mm in height.
This model features an NPN transistor polarity.
The maximum emitter-base voltage (VEBO) is 5 V.
It is suitable for various industrial, laboratory, manufacturing, and commercial electronic applications, including switching devices and amplifiers.
The country of origin for this transistor is India.
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