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onsemi Transistor, 5 A NPN, 400 V, 3-Pin TO-220 FJP5555TU
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 30.34mm |
| Length | 10.67mm |
| Model | FJP5555TU |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 400V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 14V |
| Maximum Collector Base Voltage VCBO | 1050V |
| Maximum Power Dissipation Pd | 75W |
| Maximum DC Collector Current Idc | 5A |
| Transistor Configuration | Single |
Key Features
- This NPN transistor supports up to 75 W power dissipation for robust performance.
- Designed for through-hole mounting with a compact TO-220 package form factor.
- Offers a minimum DC current gain (hFE) of 10 and operates at temperatures up to 150°C.
- Maximum collector base voltage of 1050 V ensures high-voltage applications suitability.
- The transistor has 3 pins with dimensions of 10.67 mm length, 30.34 mm height, and 4.7 mm width.
- Ideal for use in electronic circuits requiring reliable bipolar power transistors.
- Single transistor configuration for versatile industrial and electronic component applications.
Product Description
onsemi FJP5555TU bipolar junction transistor is a high-voltage NPN type device designed for power applications requiring reliable switching and amplification capabilities. It features a maximum DC collector current of 5 A and a collector emitter voltage rating of 400 V, supporting demanding industrial and electronic designs.
This transistor is housed in a 3-pin TO-220 package, allowing through-hole mounting and superior thermal dissipation, with a maximum power dissipation of 75 W ensuring sustained performance under load.
The device operates effectively at temperatures up to 150°C, with a minimum DC current gain (hFE) of 10, and a maximum collector base voltage rating of 1050 V, making it suitable for high voltage and power circuits.
Dimensions include a length of 10.67 mm, height of 30.34 mm, and width of 4.7 mm, making it compact but robust for circuit board placement. This NPN transistor supports up to 75 W power dissipation for robust performance.
Designed for through-hole mounting with a compact TO-220 package form factor. Offers a minimum DC current gain (hFE) of 10 and operates at temperatures up to 150°C. Maximum collector base voltage of 1050 V ensures high-voltage applications suitability.
The transistor has 3 pins with compact industrial dimensions suitable for PCB integration. Ideal for use in electronic circuits requiring reliable bipolar power transistors. Single transistor configuration for versatile industrial and electronic applications.
This transistor finds applications in industrial electronics, power supplies, motor drivers, and high voltage switching circuits, offering durability and efficiency. Browse the Electronics & Electricals category on EnvMart for more high-quality semiconductor components from top brands like onsemi.
Explore more products in our Bipolar Transistors category.
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Frequently Asked Questions
The maximum collector emitter voltage (Vceo) of this transistor is 400 V, making it suitable for high-voltage applications.
This model supports a maximum power dissipation of 75 W, ensuring reliable performance under load conditions.
The dimensions of the TO-220 package are 10.67 mm in length, 30.34 mm in height, and 4.7 mm in width.
The maximum operating temperature for this transistor is 150°C, allowing it to function effectively in high-temperature environments.
The minimum DC current gain (hFE) of this transistor is 10, which is essential for its amplification capabilities.
This model is designed for through-hole mounting, facilitating easy integration into circuit boards.
The maximum DC collector current (Idc) for this transistor is 5 A, suitable for various power applications.
This transistor features a single configuration, making it versatile for various industrial and electronic applications.
The maximum collector base voltage (VCBO) rating for this transistor is 1050 V, suitable for high-voltage circuits.
This transistor is suitable for applications such as industrial electronics, power supplies, motor drivers, and high voltage switching circuits.
The polarity type of this model is NPN, which is commonly used in various electronic circuits.
The country of origin for this transistor is India.
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