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onsemi High Voltage NPN Transistor 3 A, 400 V, 3-Pin DPAK Surface Mount TO-252 Package FJD5553TM

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 10.41mm
Length 6.73mm
Model FJD5553TM
Width 2.39mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type TO-252
Pin Count 3
Maximum Collector Emitter Voltage Vceo 400V
Minimum DC Current Gain hFE 10
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 14V
Maximum Collector Base Voltage VCBO 1050V
Maximum Power Dissipation Pd 1.25W
Maximum DC Collector Current Idc 3A
Transistor Configuration Single

Key Features

  • Supports maximum DC collector current of 3 A.
  • Collector emitter voltage rating of 400 V ensures high voltage performance.
  • Compact TO-252 (DPAK) surface mount package for reliable mounting.
  • Maximum power dissipation of 1.25 W suitable for low to moderate power applications.
  • Maximum operating temperature up to 150°C for robust operation.
  • Minimum DC current gain (hFE) of 10 for amplification needs.
  • Designed without automotive or specific standards approvals.

Product Description

onsemi FJD5553TM is a high voltage NPN bipolar junction transistor designed for various industrial and electronic applications requiring reliable switching and amplification at elevated voltages and currents.

This transistor supports a maximum DC collector current of 3 A and can withstand collector emitter voltages up to 400 V, making it suitable for power supply circuits, motor control, and general purpose amplification in industrial and commercial electronics.

The device comes in a TO-252 (3-pin DPAK) surface mount package that enhances thermal performance and mechanical stability, facilitating efficient PCB assembly and heat dissipation for sustained operation. Its maximum power dissipation of 1.25 W allows it to handle moderate power levels under typical operating conditions.

Operating capabilities extend up to 150°C maximum junction temperature, ensuring operational stability in demanding temperature environments such as industrial controls, HVAC systems, and power management modules.

The transistor exhibits a minimum DC current gain (hFE) of 10 and transistor polarity is NPN, which is widely applicable in switching and amplification circuits commonly used in industrial automation and electronic manufacturing.

Physical dimensions are compact with length 6.73 mm, height 10.41 mm, and width 2.39 mm, enabling space-efficient circuit designs. Supports maximum DC collector current of 3 A. Collector emitter voltage rating of 400 V ensures high voltage performance.

Compact TO-252 (DPAK) surface mount package for reliable mounting. Maximum power dissipation of 1.25 W suitable for low to moderate power applications. Maximum operating temperature up to 150°C for robust operation. Transistor polarity: NPN for standard bipolar junction transistor applications.

Pin count: 3 for typical transistor configurations. Minimum DC current gain (hFE) of 10 for amplification needs. Dimensions: Length 6.73 mm, Height 10.41 mm, Width 2.39 mm. Designed without automotive or specific standards approvals.

This transistor is ideal for use in industrial electronics, power supplies, HVAC controls, manufacturing equipment, and other applications requiring reliable bipolar transistor performance.

Explore more Bipolar Transistors and electronic components at EnvMart for your industrial and commercial electronic assembly needs.

onsemi High Voltage NPN Transistor 3 A, 400 V, 3-Pin DPAK Surface Mount TO-252 Package FJD5553TM
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Frequently Asked Questions

The maximum DC collector current for this model is 3 A.

This transistor has a collector emitter voltage rating of 400 V, ensuring high voltage performance.

It comes in a TO-252 (DPAK) surface mount package, which enhances thermal performance and mechanical stability.

The maximum power dissipation is 1.25 W, making it suitable for low to moderate power applications.

The maximum operating temperature is up to 150°C, allowing for robust operation in demanding environments.

The minimum DC current gain (hFE) is 10, suitable for amplification needs in various applications.

The dimensions are 6.73 mm in length, 10.41 mm in height, and 2.39 mm in width.

The transistor polarity is NPN, which is common for bipolar junction transistor applications.

The maximum emitter base voltage (VEBO) is 14 V.

The maximum collector base voltage (VCBO) rating is 1050 V.

This model has a pin count of 3, typical for standard transistor configurations.

It is suitable for industrial electronics, power supplies, HVAC controls, and general-purpose amplification.

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