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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 10.41mm |
| Length | 6.73mm |
| Model | FJD5553TM |
| Width | 2.39mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 400V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 14V |
| Maximum Collector Base Voltage VCBO | 1050V |
| Maximum Power Dissipation Pd | 1.25W |
| Maximum DC Collector Current Idc | 3A |
| Transistor Configuration | Single |
onsemi FJD5553TM is a high voltage NPN bipolar junction transistor designed for various industrial and electronic applications requiring reliable switching and amplification at elevated voltages and currents.
This transistor supports a maximum DC collector current of 3 A and can withstand collector emitter voltages up to 400 V, making it suitable for power supply circuits, motor control, and general purpose amplification in industrial and commercial electronics.
The device comes in a TO-252 (3-pin DPAK) surface mount package that enhances thermal performance and mechanical stability, facilitating efficient PCB assembly and heat dissipation for sustained operation. Its maximum power dissipation of 1.25 W allows it to handle moderate power levels under typical operating conditions.
Operating capabilities extend up to 150°C maximum junction temperature, ensuring operational stability in demanding temperature environments such as industrial controls, HVAC systems, and power management modules.
The transistor exhibits a minimum DC current gain (hFE) of 10 and transistor polarity is NPN, which is widely applicable in switching and amplification circuits commonly used in industrial automation and electronic manufacturing.
Physical dimensions are compact with length 6.73 mm, height 10.41 mm, and width 2.39 mm, enabling space-efficient circuit designs. Supports maximum DC collector current of 3 A. Collector emitter voltage rating of 400 V ensures high voltage performance.
Compact TO-252 (DPAK) surface mount package for reliable mounting. Maximum power dissipation of 1.25 W suitable for low to moderate power applications. Maximum operating temperature up to 150°C for robust operation. Transistor polarity: NPN for standard bipolar junction transistor applications.
Pin count: 3 for typical transistor configurations. Minimum DC current gain (hFE) of 10 for amplification needs. Dimensions: Length 6.73 mm, Height 10.41 mm, Width 2.39 mm. Designed without automotive or specific standards approvals.
This transistor is ideal for use in industrial electronics, power supplies, HVAC controls, manufacturing equipment, and other applications requiring reliable bipolar transistor performance.
Explore more Bipolar Transistors and electronic components at EnvMart for your industrial and commercial electronic assembly needs.
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