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onsemi High Voltage 3 A NPN Transistor TO-252 Surface Mount 3-Pin FJD5553TM
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 10.41mm |
| Length | 6.73mm |
| Model | FJD5553TM |
| Width | 2.39mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 400V |
| Minimum DC Current Gain hFE | 10 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 14V |
| Maximum Collector Base Voltage VCBO | 1050V |
| Maximum Power Dissipation Pd | 1.25W |
| Maximum DC Collector Current Idc | 3A |
| Transistor Configuration | Single |
Key Features
- Supports maximum DC collector current of 3 A for high power applications.
- Has a collector emitter voltage rating of 400 V for superior voltage tolerance.
- Features a minimum DC current gain (hFE) of 10 ensuring signal amplification capability.
- Maximum power dissipation of 1.25 W allows stable operation under load.
- Compact TO-252 package supports surface mounting on PCB for efficient board layout.
- Rated for operation up to 150°C maximum temperature, ensuring reliable performance in harsh environments.
- Pin count is 3, supporting standard transistor connections with NPN polarity.
- Designed with a maximum collector base voltage of 1050 V and emitter base voltage of 14 V.
Product Description
onsemi FJD5553TM is a high voltage NPN bipolar junction transistor designed for electronic circuits requiring reliable switching and amplification at higher voltages and currents. Packaged in a compact TO-252 surface mount form factor with 3 pins, this transistor supports a collector current capacity of up to 3 A and a collector emitter voltage rating of 400 V, making it suitable for robust power management circuits.
The device exhibits a minimum DC current gain (hFE) of 10 and has a maximum power dissipation of 1.25 W, enabling efficient performance with thermal reliability. It is engineered to operate up to temperatures of 150°C, ensuring durability and stable function in demanding industrial and electronic applications.
The transistor is optimized for use in a variety of industrial and electronic products including power supplies, motor controls, and signal switching circuits. Its 3-pin TO-252 surface mount package supports automated PCB assembly and compact layouts.
Maximum DC Collector Current: 3 A. Maximum Collector Emitter Voltage: 400 V. Minimum DC Current Gain (hFE): 10. Max Power Dissipation: 1.25 W. Mount Type: Surface mount. Maximum Operating Temperature: 150°C. Package Type: TO-252.
Transistor Type: NPN. Pin Count: 3.
This transistor supports reliability and performance demands across electronics manufacturing, telecommunications, automotive electronics, and industrial control systems. It is a trusted component for circuit designers seeking efficient, high voltage transistor solutions.
Explore a wide range of bipolar Transistors from onsemi and other leading industrial semiconductor providers on EnvMart.
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Frequently Asked Questions
The FJD5553TM supports a maximum DC collector current of 3 A, making it suitable for high power applications.
It has a collector emitter voltage rating of 400 V, providing superior voltage tolerance for various applications.
This transistor features a minimum DC current gain (hFE) of 10, ensuring effective signal amplification capability.
The maximum power dissipation for the FJD5553TM is 1.25 W, allowing stable operation under load conditions.
It is rated for operation up to a maximum temperature of 150°C, ensuring reliable performance in harsh environments.
This model comes in a TO-252 package type, which supports surface mounting on PCBs for efficient layout.
The FJD5553TM has a pin count of 3, supporting standard transistor connections with NPN polarity.
It has a maximum collector base voltage rating of 1050 V, which enhances its application in high voltage circuits.
The maximum emitter base voltage (VEBO) is rated at 14 V, providing additional operational specifications for circuit design.
This transistor is optimized for use in power supplies, motor controls, and signal switching circuits, among other industrial applications.
The TO-252 package has a height of 10.41 mm and a width of 2.39 mm, allowing for compact PCB layouts.
It is an NPN bipolar junction transistor, designed for reliable switching and amplification in electronic circuits.
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