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onsemi Small Signal NPN Transistor 1 A 60 V TO-92 Through Hole KSD1616AYTA

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 21.77mm
Length 5.2mm
Model KSD1616AYTA
Width 4.19mm
Mount Type Through Hole
Series KSD1616A
Maximum Operating Temperature 150°C
Package Type TO-92
Pin Count 3
Maximum Collector Emitter Voltage Vceo 60V
Minimum DC Current Gain hFE 81
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 120V
Maximum Power Dissipation Pd 750mW
Maximum DC Collector Current Idc 1A
Transistor Configuration Single
Maximum Transition Frequency ft 1MHz

Key Features

  • Maximum DC collector current is 1 ampere for continuous operation.
  • Collector emitter voltage rating is 60 volts, suitable for low to medium voltage applications.
  • Low power dissipation of 750 milliwatts enhances thermal stability.
  • Minimum DC current gain (hFE) is 81 ensuring amplification efficiency.
  • Maximum transition frequency of 1 MHz supports moderate frequency operation.
  • Designed with NPN transistor polarity for common circuit configurations.
  • Compact TO-92 package with 3 pins facilitates easy through-hole PCB integration.
  • Maximum operating temperature up to 150 degrees Celsius for harsh environments.

Product Description

onsemi KSD1616AYTA is a Small Signal NPN Bipolar Junction Transistor designed for electronic circuits requiring reliable switching and amplification. Featuring a maximum collector current of 1 ampere and collector emitter voltage of 60 volts, this device supports diverse low to medium voltage applications in consumer electronics, industrial controls, and embedded systems.

The transistor is housed in a compact TO-92 3-pin package for convenient through-hole mounting, offering flexibility in prototype and production PCB layouts. With a minimum DC current gain (hFE) of 81 and a transition frequency of 1 MHz, it ensures effective signal amplification and switching speed.

Its power dissipation rating of 750 milliwatts and maximum operating temperature of 150°C provide dependable thermal performance even under demanding conditions. Typical applications include amplification stages, switching regulators, and signal processing modules within industrial, electronics manufacturing, and automotive electronic control units.

Key features include its single transistor configuration, NPN polarity, and a maximum emitter base voltage of 6 volts. The compact dimensions (Height 21.77 mm, Width 4.19 mm, Length 5.2 mm) allow use in space-restricted circuits without sacrificing performance.

Maximum collector current 1 A for sustained operation. Collector emitter voltage rating of 60 V for versatile low-medium voltage use. 750 mW power dissipation rating for thermal stability. Minimum current gain (hFE) of 81 for efficient signal amplification.

Transition frequency 1 MHz meets medium frequency requirements. TO-92 package with 3 pins enables easy through-hole PCB mounting. Operating temperature up to 150°C ensures rugged performance. NPN transistor polarity for common circuit topologies.

Compact size suited for diverse embedded system designs.

This transistor belongs to the KSD1616A series from onsemi and is not automotive standard certified. It is ideal for industrial, laboratory, electronic manufacturing, and HVAC related circuit applications.

Explore more quality components from the Bipolar Transistors category on EnvMart for your electronic design and industrial needs.

onsemi Small Signal NPN Transistor 1 A 60 V TO-92 Through Hole KSD1616AYTA
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