onsemi Small Signal NPN Transistor, 800 mA, 25 V, Surface Mount SOT-23 Package KSC3265YMTF

onsemi KSC3265YMTF is a small signal NPN bipolar transistor designed for low power amplification and switching applications. The device supports a maximum collector current of 800 mA and a maximum collector-emitter voltage of 25 V, making it suitable for a wide range of electronic circuits, including industrial control systems and consumer electronics.

The transistor is housed in a compact SOT-23 surface mount package with a 3-pin configuration, allowing efficient use of PCB space and ease of assembly in automated manufacturing. With a maximum power dissipation of 200 mW and an operating temperature capability of up to 150°C, this component ensures reliable performance under typical operating conditions.

The transition frequency of 1 MHz allows the transistor to handle moderate frequency switching and amplification tasks typically required in signal processing applications. Its NPN polarity and minimum DC gain (hFE) value of 40 provide stable and predictable amplification characteristics necessary for analog circuit designs.

Key physical dimensions include a length of 2.9 mm, width of 2.4 mm, and height of 0.97 mm. The device does not conform to any specific automotive or industrial standards, making it well-suited for general-purpose applications.

This transistor is commonly used in industrial automation, laboratory instruments, consumer electronics, and communication equipment. Its surface mount package and moderate electrical ratings make it a versatile choice for designers requiring a reliable small signal transistor with moderate power and frequency capabilities.

Maximum DC collector current of 800 mA ensures efficient switching and amplification. Collector-emitter voltage rated at 25 V suitable for low voltage electronic circuits. Small form factor SOT-23 package allows compact PCB mounting.

Surface mount type with a 3-pin configuration for easy integration into PCB designs. High transition frequency of 1 MHz supports high-speed signal processing. Maximum power dissipation of 200 mW ensures reliable thermal performance.

Operating temperature up to 150°C enhances durability in demanding environments. NPN transistor polarity suitable for various bipolar junction transistor (BJT) applications. Minimum DC current gain (hFE) of 40 guarantees stable amplification.

Dimensions: Length 2.9 mm, Width 2.4 mm, Height 0.97 mm for compact electronics.

This product belongs to the Bipolar Transistors category and is ideal for electronics manufacturing, prototyping, industrial automation, and academic laboratory use. Explore additional Transistor and semiconductor products in the Electronics & Electricals category on EnvMart.