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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | NZT660 |
| Width | 3.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Maximum Collector Emitter Voltage Vceo | -60V |
| Minimum DC Current Gain hFE | 80 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -5V |
| Maximum Collector Base Voltage VCBO | -80V |
| Maximum Power Dissipation Pd | 2W |
| Maximum DC Collector Current Idc | -3A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 100MHz |
| STMicroelectronics STN9360 Transistor, -500 mA PNP, -600 V, 3-Pin SOT-223Brand | STMicroelectronics |
onsemi NZT660 Small Signal PNP Transistor is engineered for high performance in electronic circuits requiring moderate current handling and voltage ratings. Featuring a maximum DC collector current of -3 A and a maximum collector emitter voltage of -60 V, this transistor is packaged in a compact 4-pin SOT-223 surface mount design that ensures minimal board space utilization while providing excellent thermal characteristics.
This device displays a maximum power dissipation rating of 2 W allowing it to operate efficiently in demanding environments. Its transistor configuration is single, PNP polarity, with a minimum DC current gain of 80, suitable for amplification and switching tasks within industrial, laboratory, and electronic manufacturing sectors.
Operating temperature ranges from -55°C to 150°C enable reliable performance under extreme conditions common in automotive and industrial settings. The maximum collector base voltage of -80 V and emitter base voltage of -5 V provide flexibility for various circuit designs. It also supports a maximum transition frequency of 100 MHz, making it suitable for high-frequency applications.
Its compact physical size, 6.7 mm in length, 3.7 mm width, and 1.8 mm height, offers easy PCB integration. Compliant with no specific standards or automotive requirements, this transistor serves well in a wide spectrum of electronic projects and products.
Designed for minimal size with highest reliability and maximum thermal performance. Maximum power dissipation of 2 watts ensuring efficient heat handling. Operates reliably from -55°C to 150°C for versatile industrial use.
Maximum collector base voltage of -80 volts supports robust circuit applications. Transition frequency of 100 MHz suitable for high-frequency switching. Compact dimensions: length 6.7 mm, width 3.7 mm, height 1.8 mm. Single transistor configuration with PNP polarity ideal for discrete semiconductor requirements.
This transistor finds applications in industrial electronics, automotive electronics, instrumentation, and general semiconductor discrete component assemblies. It supports efficient switching and amplification in various circuits and systems.
Explore more on semiconductor components and similar Bipolar Transistors available within the EnvMart catalog to meet specialized electronic design needs.
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