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onsemi Small Signal PNP Transistor -3 A, -60 V, 4-Pin SOT-223 Surface Mount NZT660

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.8mm
Length 6.7mm
Model NZT660
Width 3.7mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-223
Minimum Operating Temperature -55°C
Pin Count 4
Maximum Collector Emitter Voltage Vceo -60V
Minimum DC Current Gain hFE 80
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -80V
Maximum Power Dissipation Pd 2W
Maximum DC Collector Current Idc -3A
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz
STMicroelectronics STN9360 Transistor, -500 mA PNP, -600 V, 3-Pin SOT-223Brand STMicroelectronics

Key Features

  • Designed for minimal size with highest reliability and maximum thermal performance.
  • Maximum power dissipation of 2 watts ensuring efficient heat handling.
  • Operates reliably from -55°C to 150°C for versatile industrial use.
  • Maximum collector base voltage of -80 volts supports robust circuit applications.
  • Transition frequency of 100 MHz suitable for high-frequency switching.
  • Single transistor configuration with PNP polarity ideal for discrete semiconductor requirements.

Product Description

onsemi NZT660 Small Signal PNP Transistor is engineered for high performance in electronic circuits requiring moderate current handling and voltage ratings. Featuring a maximum DC collector current of -3 A and a maximum collector emitter voltage of -60 V, this transistor is packaged in a compact 4-pin SOT-223 surface mount design that ensures minimal board space utilization while providing excellent thermal characteristics.

This device displays a maximum power dissipation rating of 2 W allowing it to operate efficiently in demanding environments. Its transistor configuration is single, PNP polarity, with a minimum DC current gain of 80, suitable for amplification and switching tasks within industrial, laboratory, and electronic manufacturing sectors.

Operating temperature ranges from -55°C to 150°C enable reliable performance under extreme conditions common in automotive and industrial settings. The maximum collector base voltage of -80 V and emitter base voltage of -5 V provide flexibility for various circuit designs. It also supports a maximum transition frequency of 100 MHz, making it suitable for high-frequency applications.

Its compact physical size, 6.7 mm in length, 3.7 mm width, and 1.8 mm height, offers easy PCB integration. Compliant with no specific standards or automotive requirements, this transistor serves well in a wide spectrum of electronic projects and products.

Designed for minimal size with highest reliability and maximum thermal performance. Maximum power dissipation of 2 watts ensuring efficient heat handling. Operates reliably from -55°C to 150°C for versatile industrial use.

Maximum collector base voltage of -80 volts supports robust circuit applications. Transition frequency of 100 MHz suitable for high-frequency switching. Compact dimensions: length 6.7 mm, width 3.7 mm, height 1.8 mm. Single transistor configuration with PNP polarity ideal for discrete semiconductor requirements.

This transistor finds applications in industrial electronics, automotive electronics, instrumentation, and general semiconductor discrete component assemblies. It supports efficient switching and amplification in various circuits and systems.

Explore more on semiconductor components and similar Bipolar Transistors available within the EnvMart catalog to meet specialized electronic design needs.

onsemi Small Signal PNP Transistor -3 A, -60 V, 4-Pin SOT-223 Surface Mount NZT660
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Frequently Asked Questions

The maximum collector emitter voltage for this model is -60 V.

This transistor has a maximum power dissipation rating of 2 W, allowing for efficient heat handling in various applications.

The dimensions of this unit are 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height.

It operates reliably within a temperature range of -55°C to 150°C, making it suitable for extreme conditions.

The maximum transition frequency for this transistor is 100 MHz, suitable for high-frequency applications.

The minimum DC current gain for this model is 80, which is suitable for amplification tasks.

This model features a single transistor configuration with PNP polarity.

The maximum DC collector current for this unit is -3 A.

It is packaged in a compact 4-pin SOT-223 surface mount design, which minimizes board space utilization.

The maximum emitter base voltage for this model is -5 V.

This transistor is suitable for use in industrial electronics, automotive electronics, instrumentation, and general semiconductor discrete component assemblies.

The maximum collector base voltage for this model is -80 V, providing flexibility for various circuit designs.

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