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onsemi High Voltage PNP Transistor 500 mA, 350 V, TO-92 Package 2N6520TA

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 19.05mm
Length 4.58mm
Model 2N6520TA
Width 3.86mm
Mount Type Through Hole
Series 2N6520
Maximum Operating Temperature 150°C
Package Type TO-92
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -350V
Minimum DC Current Gain hFE 20
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -350V
Maximum Power Dissipation Pd 625mW
Maximum DC Collector Current Idc -500mA
Transistor Configuration Single
Maximum Transition Frequency ft 200MHz

Key Features

  • Designed for through-hole mounting with TO-92 package type.
  • Maximum power dissipation of 625 mW ensures reliable operation.
  • Single transistor configuration with PNP polarity.
  • Wide operating temperature range from -55°C to 150°C.
  • Maximum transition frequency of 200 MHz for high-frequency applications.
  • Minimum DC current gain (hFE) of 20 for stable amplification.
  • Pin count of 3 suitable for discrete semiconductor circuits.

Product Description

onsemi 2N6520TA is a high voltage PNP transistor designed for discrete semiconductor applications requiring a maximum collector current of 500 mA and collector-emitter voltage of 350 V. Packaged in a TO-92 through-hole mount, this single transistor features a maximum power dissipation of 625 mW, supporting robust performance in various electronic circuits.

Operating with a minimum DC current gain (hFE) of 20 and a maximum transition frequency of 200 MHz, the 2N6520TA is suitable for moderate frequency amplifier circuits and switching applications. Its compact physical size includes a height of 19.05 mm, length of 4.58 mm, and width of 3.86 mm, making it appropriate for space-constrained PCB layouts.

This transistor supports a wide operating temperature range from -55°C to 150°C, ensuring reliability in harsh industrial or environmental conditions. The three-pin configuration enables easy integration within discrete semiconductor designs, typically found in power regulation, signal amplification, and general switching contexts.

Through-hole TO-92 package with three pins for stable mounting. High-voltage PNP transistor suitable for power and signal applications. Robust maximum power dissipation rating of 625 milliwatts for reliable operation. Wide temperature tolerance from -55 to 150 degrees Celsius for industrial use.

Compact physical dimensions facilitate PCB integration in various electronic devices. Minimum DC current gain of 20 ensures sufficient amplification. Maximum transition frequency of 200 MHz supports moderate frequency circuits.

No specific automotive or industry certifications included.

This transistor is ideal for industrial, manufacturing, and electronic equipment applications, enabling efficient switching and amplification. Use within circuits requiring reliable PNP transistor performance in harsh conditions is recommended.

Explore more Bipolar Transistors and high voltage semiconductors at EnvMart for your electronic subsystems and equipment design requirements.

onsemi High Voltage PNP Transistor 500 mA, 350 V, TO-92 Package 2N6520TA
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for the 2N6520TA is -350 V.

This model has a maximum power dissipation rating of 625 mW.

The minimum DC current gain (hFE) for this transistor is 20.

The maximum transition frequency of the 2N6520TA is 200 MHz.

The dimensions of this transistor are 19.05 mm in height, 4.58 mm in length, and 3.86 mm in width.

The operating temperature range for the 2N6520TA is from -55°C to 150°C.

This model is packaged in a TO-92 through-hole mount configuration.

The 2N6520TA has a pin count of 3.

This transistor is suitable for applications such as power regulation, signal amplification, and general switching.

The maximum DC collector current (Idc) for the 2N6520TA is -500 mA.

The transistor configuration of this model is single.

The maximum emitter-base voltage (VEBO) for the 2N6520TA is -5 V.

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