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onsemi 1 kV 1 A Fast Recovery Diode 2-Pin Through Hole DO-41 RGP10M

Category Semiconductor Diode Brand onsemi Condition New

Specifications

Country of Origin India
Diameter 2.72mm
Brand onsemi
Height 5.2mm
Model RGP10M
Mount Type Through Hole
Maximum Operating Temperature 175°C
Package Type DO-41
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Continuous Forward Current If 1A
Peak Reverse Repetitive Voltage Vrrm 1kV
Diode Configuration Single
Rectifier Type Fast Recovery
Peak Reverse Current Ir 200μA
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 1.3V
Peak Reverse Recovery Time trr 500ns

Key Features

  • Maximum continuous forward current of 1 Ampere.
  • Peak reverse repetitive voltage rating of 1 kV.
  • Fast recovery time of 500 nanoseconds for efficient switching.
  • Operating temperature range from -65°C to 175°C.
  • Peak non-repetitive forward surge current of 30 Amperes.
  • Package style suitable for through hole installation in electronic circuits.
  • Compact dimensions with height 5.2 mm and diameter 2.72 mm.
  • Peak reverse current rated at 200 microamperes.

Product Description

onsemi RGP10M is a high-quality fast recovery diode designed for electronic and power applications requiring efficient rectification. This diode is rated for a maximum continuous forward current of 1 Ampere and can withstand a peak reverse repetitive voltage of up to 1 kV, making it suitable for demanding power circuits.

Its fast recovery time of 500 nanoseconds significantly reduces switching losses, improving circuit efficiency in applications such as power supplies, inverters, and motor drives. The device is built into a robust DO-41 package with two pins optimized for through hole mounting, ensuring reliable mechanical and electrical connections.

Designed to operate over a wide temperature range from -65°C minimum to 175°C maximum, the RGP10M diode ensures reliable performance even under harsh temperature conditions. Its peak non-repetitive forward surge current rating of 30 Amperes enables it to handle transient overloads effectively.

The compact physical dimensions of 5.2 mm height and 2.72 mm diameter make it suitable for dense PCB layouts without compromising thermal performance. Peak reverse current is low at 200 microamperes, contributing to overall energy efficiency.

Maximum continuous forward current of 1 Ampere. Peak reverse repetitive voltage rating of 1 kV. Fast reverse recovery time of 500 nanoseconds. Wide operating temperature range from -65°C to 175°C. Peak non-repetitive forward surge current of 30 Amperes.

DO-41 package, 2-pin through hole mounting. Compact height and diameter suitable for space-constrained designs. Low peak reverse current for improved efficiency.

This diode is ideal for use in power rectification, voltage clamping, protection circuits, and other semiconductor applications in industrial, automotive, and consumer electronics sectors.

Explore more high-quality Semiconductor Diodes and fast recovery rectifiers in the Electronics & Electricals category at EnvMart for your design and manufacturing needs.

onsemi 1 kV 1 A Fast Recovery Diode 2-Pin Through Hole DO-41 RGP10M
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