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onsemi General Purpose 400 V 1 A Diode 2-Pin DO-41 EGP10G
Specifications
| Country of Origin | India |
|---|---|
| Diameter | 2.72mm |
| Brand | onsemi |
| Height | 5.2mm |
| Model | EGP10G |
| Mount Type | Through Hole |
| Series | EGP10A - EGP10K |
| Maximum Operating Temperature | 150°C |
| Package Type | DO-41 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 1A |
| Peak Reverse Repetitive Voltage Vrrm | 400V |
| Diode Configuration | Single |
| Rectifier Type | General Purpose |
| Peak Reverse Current Ir | 100μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A |
| Maximum Forward Voltage Vf | 1.25V |
| Peak Reverse Recovery Time trr | 50ns |
Key Features
- This diode operates with a maximum continuous forward current of 1 ampere.
- It features a peak reverse repetitive voltage rating of 400 volts for robust voltage withstand capability.
- The diode is housed in a DO-41 package suitable for through-hole mounting applications.
- Peak forward surge current reaches up to 30 amperes, ensuring transient tolerance.
- Maximum forward voltage drop is 1.25 volts, optimizing efficiency.
- It has a fast peak reverse recovery time of 50 nanoseconds, supporting switching applications.
- Operating temperature ranges from -65°C to a maximum of 150°C, ensuring performance across environmental extremes.
- Physical dimensions include a height of 5.2 mm and a diameter of 2.72 mm.
Product Description
onsemi EGP10G general purpose diode in a 2-pin DO-41 through-hole package rated at 400 volts and 1 ampere is engineered for reliable rectification in electronic circuits.
This diode supports a maximum continuous forward current of 1 ampere and withstands peak reverse voltages of up to 400 volts, ensuring durability under demanding electrical conditions.
The diode's maximum forward voltage drop of 1.25 volts contributes to efficient power management, while its peak forward surge current capacity of 30 amperes enables it to handle transient overloads reliably.
With a fast peak reverse recovery time of 50 nanoseconds, it is suitable for switching operations in power electronics. Designed to operate within temperatures ranging from -65°C to 150°C, the EGP10G diode is suitable for industrial, electronic, and power supply applications in harsh environments.
This diode features through-hole mounting in a DO-41 package. Physical size specifications include a height of 5.2 mm and a diameter of 2.72 mm. The single Diode configuration offers general purpose rectification without automotive standards or special approvals.
Applications include power rectifiers, signal conditioning, and general electronic component integration. Its robust electrical ratings and general purpose design make it a versatile component in discrete semiconductor needs.
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Frequently Asked Questions
The EGP10G diode supports a maximum continuous forward current of 1 ampere.
It features a peak reverse repetitive voltage rating of 400 volts, ensuring robust voltage withstand capability.
The diode has a height of 5.2 mm and a diameter of 2.72 mm, making it suitable for various applications.
The EGP10G is housed in a DO-41 package, which is suitable for through-hole mounting applications.
The maximum forward voltage drop is 1.25 volts, which helps optimize efficiency in circuits.
It can handle a peak forward surge current of up to 30 amperes, ensuring it can tolerate transient overloads.
The diode has a fast peak reverse recovery time of 50 nanoseconds, making it suitable for switching applications.
This model operates within a temperature range of -65°C to 150°C, allowing it to perform in extreme environments.
It is classified as a general purpose rectifier, suitable for various electronic applications.
This diode has a pin count of 2, consistent with its DO-41 package design.
The peak reverse current is rated at 100 microamperes, indicating its performance under reverse bias conditions.
The EGP10G diode is manufactured in India.
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