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Vishay Fast Recovery Diode 600 V 30 A, TO-247AC 3-Pin Common Cathode VS-CPU6006-N3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 20.7mm |
| Length | 15.87mm |
| Model | VS-CPU6006-N3 |
| Width | 5.31mm |
| Mount Type | Through Hole |
| Series | VSX |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247AC |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Forward Current If | 30A |
| Peak Reverse Repetitive Voltage Vrrm | 600V |
| Diode Configuration | Common Cathode |
| Rectifier Type | Fast Recovery |
| Peak Reverse Current Ir | 250μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 300A |
| Maximum Forward Voltage Vf | 1.65V |
| Peak Reverse Recovery Time trr | 110ns |
Key Features
- Fast recovery diode with peak reverse recovery time of 110 nanoseconds.
- Maximum continuous forward current of 30 amperes for high load capacity.
- Peak reverse repetitive voltage rating of 600 volts ensures durability under reverse voltage stress.
- Common cathode diode configuration with low maximum forward voltage of 1.65 V.
- Designed for through-hole mounting in TO-247AC package size for easy PCB assembly.
- Operating temperature range from -65°C to 175°C supports harsh environments.
- Low peak reverse current of 250 microamperes reduces leakage and improves efficiency.
- Supports peak non-repetitive forward surge current of 300 amperes for transient loads.
Product Description
Vishay VS-CPU6006-N3 is a high-performance fast recovery diode rated for 600 V peak reverse voltage and 30 A maximum continuous forward current. Housed in a robust TO-247AC package with three pins, this diode features a common cathode configuration optimized for switching and rectification applications.
The diode utilizes FRED Pt® hyperfast recovery epitaxial technology, incorporating platinum doping to achieve extremely low leakage currents even at elevated temperatures. It can operate reliably from -65°C up to a maximum junction temperature of 175°C, making it ideal for industrial, electronic components, power supply, and power connector systems.
Key features include a low maximum forward voltage of 1.65 V, peak reverse recovery time of 110 nanoseconds, and the ability to withstand peak non-repetitive forward surge currents up to 300 amperes. These characteristics enable improved efficiency and reduced electromagnetic interference in switched mode power supplies and other high-frequency circuits.
The diode is designed for through-hole mounting on printed circuit boards in environments requiring durability and high power handling capabilities. It is manufactured in China and meets industry standards though no specific approvals are listed.
Fast recovery diode with 110 ns recovery time. Maximum continuous forward current of 30 A. Peak reverse repetitive voltage of 600 V. Common cathode configuration for flexible circuit design. Low forward voltage drop of 1.65 V reduces power loss.
Wide operating temperature range from -65°C to 175°C. Through-hole mount in TO-247AC package. Peak forward surge current rating of 300 A supports transient loads. FRED Pt® technology for low leakage and high reliability.
Suitable for industrial, power supply, and electronic component applications. Explore the full range of Vishay semiconductor Diodes and rectifiers for your industrial and power electronics needs on EnvMart.
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Frequently Asked Questions
The maximum continuous forward current of the Vishay VS-CPU6006-N3 diode is 30 amperes.
This model has a peak reverse repetitive voltage rating of 600 volts.
The peak reverse recovery time for the VS-CPU6006-N3 is 110 nanoseconds.
The maximum forward voltage drop of this diode is 1.65 volts.
The operating temperature range for the VS-CPU6006-N3 is from -65°C to 175°C.
This diode features a common cathode configuration.
The diode is housed in a TO-247AC package type, designed for through-hole mounting.
It supports a peak non-repetitive forward surge current of 300 amperes.
The peak reverse current for the VS-CPU6006-N3 is 250 microamperes.
The dimensions of the diode are 15.87 mm in length, 5.31 mm in width, and 20.7 mm in height.
This diode is suitable for industrial, power supply, and electronic component applications.
The diode is manufactured in China.
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