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STMicroelectronics 400 V 1 A Fast Recovery Diode DO-214AA Surface Mount STTH1R04U

Category Diode Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Diameter 2.95mm
Brand STMicroelectronics
Height 2.45mm
Length 4.6mm
Model STTH1R04U
Width 3.95mm
Mount Type Surface
Series STTH1R04
Maximum Operating Temperature 175°C
Package Type DO-214AA
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Continuous Forward Current If 1A
Peak Reverse Repetitive Voltage Vrrm 400V
Diode Configuration Single
Rectifier Type Fast Recovery
Peak Reverse Current Ir 50μA
Peak Non-Repetitive Forward Surge Current Ifsm 30A
Maximum Forward Voltage Vf 1.15V
Peak Reverse Recovery Time trr 30ns

Key Features

  • Supports maximum continuous forward current of 1 ampere.
  • Peak reverse repetitive voltage rating of 400 volts.
  • Fast recovery rectifier type with peak reverse recovery time of 30 nanoseconds.
  • Operating temperature range from -65°C minimum to 175°C maximum.
  • Low maximum forward voltage drop of 1.15 volts improves efficiency.
  • Peak non-repetitive forward surge current capability up to 30 amperes.
  • Low leakage current with peak reverse current at 50 microamperes.
  • Single diode configuration suitable for discrete semiconductor use.

Product Description

STMicroelectronics STTH1R04U is a high-performance fast recovery diode designed for surface mount technology in a compact DO-214AA package. Rated for 400 V peak reverse voltage and 1 A continuous forward current, this diode offers reliable rectification with low forward voltage drop and fast switching characteristics.

The device features a peak reverse recovery time of 30 ns, making it ideal for applications requiring efficient switching and minimal losses such as power supplies, motor drives, and industrial control circuits. Its wide operating temperature range from -65°C up to 175°C allows operation in harsh environments including automotive and industrial sectors.

Its low leakage current (50µA) and high peak non-repetitive forward surge current capability (30 A) enhance robustness under transient conditions. The diode's single configuration streamlines its use in discrete semiconductor designs where performance and size are critical.

Key physical dimensions include a length of 4.6 mm, width of 3.95 mm, height of 2.45 mm, and a pin count of 2, conforming to industry-standard DO-214AA footprint for easy PCB mounting.

Supports maximum continuous forward current of 1 ampere. Peak reverse repetitive voltage rating of 400 volts. Fast recovery rectifier type with peak reverse recovery time of 30 nanoseconds. Compact 2-pin DO-214AA surface mount package.

Wide operating temperature range from -65°C to 175°C. Low maximum forward voltage drop of 1.15 volts. Peak non-repetitive forward surge current up to 30 amperes. Low peak reverse leakage current of 50 microamperes. Single diode configuration for discrete circuit applications.

Suitable for industrial, automotive, power supply, and electronic rectification uses.

This diode is ideal for engineers and system designers requiring a reliable and efficient fast recovery rectifier Diode in a surface mount package. Browse additional STMicroelectronics electronic components in EnvMart for complementary semiconductor solutions.

STMicroelectronics 400 V 1 A Fast Recovery Diode DO-214AA Surface Mount STTH1R04U
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Frequently Asked Questions

The maximum continuous forward current rating of this diode is 1 ampere.

The peak reverse repetitive voltage rating is 400 volts.

The peak reverse recovery time is 30 nanoseconds.

The operating temperature range is from -65°C to 175°C.

The maximum forward voltage drop is 1.15 volts.

The peak non-repetitive forward surge current capability is up to 30 amperes.

The diode has a length of 4.6 mm, a width of 3.95 mm, and a height of 2.45 mm.

This diode has a pin count of 2.

This diode uses a DO-214AA surface mount package.

The peak reverse current is 50 microamperes.

This diode is suitable for applications in industrial, automotive, power supply, and electronic rectification.

The diode configuration is single, suitable for discrete semiconductor use.

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