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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.75mm |
| Length | 5mm |
| Model | NSS40300MDR2G |
| Width | 4mm |
| Mount Type | Surface |
| Series | e2PowerEdge |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Maximum Collector Emitter Voltage Vceo | -40V dc |
| Minimum DC Current Gain hFE | 150 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -7V |
| Maximum Collector Base Voltage VCBO | 40V dc |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 783mW |
| Maximum DC Collector Current Idc | -3A |
| Transistor Configuration | Isolated |
| Maximum Transition Frequency ft | 100MHz |
onsemi NSS40300MDR2G is a high-quality PNP bipolar transistor designed for general purpose and automotive applications. This surface mount device features an 8-pin SOIC package, which is compact and suited for modern PCB layouts.
With a maximum DC collector current of -3 A and a maximum collector-emitter voltage of -40 V DC, this transistor can handle moderate power loads efficiently. It offers a minimum current gain (hFE) of 150, ensuring good amplification characteristics suitable for a wide range of electronic circuits.
The device supports a maximum power dissipation of 783 mW and operates reliably across a broad temperature range from -55°C to 150°C. Its design complies with AEC-Q101 automotive standards, providing robustness required for automotive and demanding industrial environments.
The transistor's isolated configuration and surface mount package facilitate ease of installation and heat dissipation, making it a versatile component for power switching, signal amplification, and control circuits in industrial, automotive, consumer electronics, and manufacturing applications.
Package dimensions are approximately 5 mm in length, 4 mm width, and 1.75 mm height, accommodating dense PCB designs. The transistor also has a maximum transition frequency of 100 MHz, supporting high-speed switching operations.
This transistor operates with a maximum power dissipation of 783 mW. It features an isolated transistor configuration suitable for surface mount technology. Offers a minimum DC current gain (hFE) of 150 for efficient amplification.
Designed to operate from -55°C up to 150°C for reliable performance in varied conditions. Complies with automotive standard AEC-Q101 ensuring high reliability. Pin count of 8 and package dimensions approximately 5 mm length, 4 mm width, 1.75 mm height.
Maximum transition frequency of 100 MHz enables fast switching applications.
This product is ideal for industrial electronics, automotive circuits, power management systems, and various applications requiring robust and efficient transistor performance. Explore our Electronics & Electricals category for more semiconductor and transistor options.
Explore more products in our Bipolar Transistors category.
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