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onsemi PNP Transistor SOIC 8-Pin Surface Mount -3A, -40V DC, hFE 150 NSS40300MDR2G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.75mm
Length 5mm
Model NSS40300MDR2G
Width 4mm
Mount Type Surface
Series e2PowerEdge
Maximum Operating Temperature 150°C
Package Type SOIC
Minimum Operating Temperature -55°C
Pin Count 8
Maximum Collector Emitter Voltage Vceo -40V dc
Minimum DC Current Gain hFE 150
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -7V
Maximum Collector Base Voltage VCBO 40V dc
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 783mW
Maximum DC Collector Current Idc -3A
Transistor Configuration Isolated
Maximum Transition Frequency ft 100MHz

Key Features

  • This transistor operates with a maximum power dissipation of 783 mW.
  • It features an isolated transistor configuration suitable for surface mount technology.
  • Offers a minimum DC current gain (hFE) of 150 for efficient amplification.
  • Designed to operate from -55°C up to 150°C for reliable performance in varied conditions.
  • Complies with automotive standard AEC-Q101 ensuring high reliability.
  • Pin count of 8 and package dimensions approximately 5 mm length, 4 mm width, 1.75 mm height.
  • Maximum transition frequency of 100 MHz enables fast switching applications.

Product Description

onsemi NSS40300MDR2G is a high-quality PNP bipolar transistor designed for general purpose and automotive applications. This surface mount device features an 8-pin SOIC package, which is compact and suited for modern PCB layouts.

With a maximum DC collector current of -3 A and a maximum collector-emitter voltage of -40 V DC, this transistor can handle moderate power loads efficiently. It offers a minimum current gain (hFE) of 150, ensuring good amplification characteristics suitable for a wide range of electronic circuits.

The device supports a maximum power dissipation of 783 mW and operates reliably across a broad temperature range from -55°C to 150°C. Its design complies with AEC-Q101 automotive standards, providing robustness required for automotive and demanding industrial environments.

The transistor's isolated configuration and surface mount package facilitate ease of installation and heat dissipation, making it a versatile component for power switching, signal amplification, and control circuits in industrial, automotive, consumer electronics, and manufacturing applications.

Package dimensions are approximately 5 mm in length, 4 mm width, and 1.75 mm height, accommodating dense PCB designs. The transistor also has a maximum transition frequency of 100 MHz, supporting high-speed switching operations.

This transistor operates with a maximum power dissipation of 783 mW. It features an isolated transistor configuration suitable for surface mount technology. Offers a minimum DC current gain (hFE) of 150 for efficient amplification.

Designed to operate from -55°C up to 150°C for reliable performance in varied conditions. Complies with automotive standard AEC-Q101 ensuring high reliability. Pin count of 8 and package dimensions approximately 5 mm length, 4 mm width, 1.75 mm height.

Maximum transition frequency of 100 MHz enables fast switching applications.

This product is ideal for industrial electronics, automotive circuits, power management systems, and various applications requiring robust and efficient transistor performance. Explore our Electronics & Electricals category for more semiconductor and transistor options.

Explore more products in our Bipolar Transistors category.

onsemi PNP Transistor SOIC 8-Pin Surface Mount -3A, -40V DC, hFE 150 NSS40300MDR2G
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) for this transistor is -40 V DC.

This model has a maximum power dissipation of 783 mW.

The transistor offers a minimum DC current gain (hFE) of 150, which ensures efficient amplification.

It is designed to operate within a temperature range of -55°C to 150°C.

The package dimensions are approximately 5 mm in length, 4 mm in width, and 1.75 mm in height.

The maximum DC collector current (Idc) for this transistor is -3 A.

The maximum transition frequency for this transistor is 100 MHz, allowing for fast switching applications.

Yes, it complies with the AEC-Q101 automotive standard, ensuring high reliability for automotive applications.

This model supports surface mount technology, making it suitable for modern PCB layouts.

The transistor features an isolated configuration, which is suitable for various applications.

The maximum emitter-base voltage (VEBO) for this transistor is -7 V.

It is suitable for general purpose and automotive applications, including power switching and signal amplification.

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