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Nexperia Low Saturation Voltage NPN Transistor 1 A 100 V 3-Pin SOT-89 PBSS8110X,135

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Nexperia Low Saturation Voltage NPN Transistor 1 A 100 V 3-Pin SOT-89 PBSS8110X,135

Name: Nexperia Low Saturation Voltage NPN Transistor 1 A 100 V 3-Pin SOT-89 PBSS8110X,135
Brand: Nexperia
SKU: 373311
Price: 0.21 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	Hong Kong
Brand	Nexperia
Height	1.6mm
Length	4.6mm
Model	PBSS8110X,135
Width	2.6mm
Mount Type	Surface
Series	PBSS8110X
Maximum Operating Temperature	150°C
Package Type	SOT-89
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	100V
Minimum DC Current Gain hFE	80
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	120V
Maximum Power Dissipation Pd	2W
Maximum DC Collector Current Idc	1A
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz
onsemi Transistor, 2 A NPN, 100 V, 4-Pin SOT-223Brand	onsemi

Key Features

Compact surface-mount SOT-89 package for space-saving PCB layouts.
Maximum collector current of 1 ampere suitable for switching and digital applications.
High collector-emitter voltage rating of 100 volts for robust performance.
Low collector-emitter saturation voltage reduces power loss and heat generation.
NPN transistor configuration with a minimum current gain (hFE) of 80.
Wide operating temperature range from -65°C to 150°C for industrial environments.
Maximum power dissipation of 2 watts ensuring reliable thermal handling.
Supports transition frequency up to 100 MHz, suitable for high-frequency circuits.

Product Description

The Nexperia PBSS8110X,135 is a low saturation voltage NPN bipolar junction transistor designed for efficient switching and digital circuit applications. It supports a maximum collector current of 1 ampere and is rated for a collector-emitter voltage of 100 volts. Packaged in a compact 3-pin SOT-89 surface-mount device, it allows for space-saving PCB design while maintaining robust electrical performance.

This transistor features a low collector-emitter saturation voltage, which minimizes power loss and heat generation, thus enhancing overall circuit efficiency and reliability. It has a minimum DC current gain (hFE) of 80, enabling effective amplification in various electronic circuits.

The device operates over a wide temperature range from -65°C to 150°C, making it suitable for industrial, laboratory, and commercial electronics where temperature stability is critical. With a maximum power dissipation of 2 watts, it offers reliable thermal performance in compact applications.

Its maximum transition frequency of 100 MHz makes it appropriate for high-speed switching circuits and RF applications. The transistor's pin count is limited to 3, with physical dimensions including a length of 4.6 mm, width of 2.6 mm, and height of 1.6 mm.

Compact 3-pin SOT-89 surface-mount package. High durability across wide temperature range of -65°C to 150°C. Low saturation voltage for enhanced power efficiency. Robust maximum voltages (Vceo: 100 V, VCBO: 120 V, VEBO: 5 V).

Minimum DC current gain ensures stable amplification. Maximum power dissipation of 2 W. Suitable for industrial, laboratory, and commercial semiconductor applications. High-frequency operation up to 100 MHz. Explore more semiconductor and transistor products from Nexperia and other leading manufacturers on EnvMart for your industrial and electronic component needs.

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