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onsemi Transistor NPN 100 mA, 45 V, 6-Pin SOT-363 Surface Mount BC847CDW1T1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.1mm
Length 2.2mm
Model BC847CDW1T1G
Width 1.35mm
Mount Type Surface
Series BC847CDW1
Maximum Operating Temperature 150°C
Package Type SOT-363
Minimum Operating Temperature -55°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 200
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 380mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Maximum DC collector current of 100 mA ensures moderate current handling capability.
  • Collector-Emitter voltage rating at 45 V enables operation in medium voltage applications.
  • Surface mount package type SOT-363 offers compact mounting on PCB.
  • Minimum DC current gain of 200 provides good amplification performance.
  • Wide operating temperature range from -55°C to 150°C for reliability.
  • Maximum power dissipation rated 380 mW supports moderate power applications.
  • Maximum transition frequency of 100 MHz suitable for high-frequency circuitry.
  • Transistor is a single configuration NPN polarity device.

Product Description

onsemi BC847CDW1T1G transistor is a general-purpose NPN bipolar transistor designed for surface mounting with a compact 6-pin SOT-363 package. It supports a maximum DC collector current of 100 mA and a collector-emitter voltage of 45 V, making it suitable for a variety of low power switching and amplification applications.

The transistor features a minimum DC current gain (hFE) of 200 and a maximum transition frequency (ft) of 100 MHz, enabling it to operate efficiently in analog and digital circuits requiring moderate frequency response. It can operate within a wide temperature range from -55°C to 150°C, ensuring durability and stable performance in harsh environments.

Power dissipation is rated at 380 mW, which is adequate for typical small-signal transistor duties in industrial, automotive, and consumer electronics. The device's small physical size (2.2 mm length, 1.35 mm width, 1.1 mm height) facilitates high-density PCB designs with surface mount technology.

The BC847CDW1T1G transistor is qualified to the automotive AEC-Q101 standard, indicating its reliability for automotive system usage and extended lifecycle applications. Maximum DC collector current of 100 mA for moderate current switching and amplification.

Collector-emitter voltage up to 45 V supports various medium voltage circuits. Compact surface mount 6-pin SOT-363 package enables space-saving designs. Minimum DC current gain of 200 with transition frequency of 100 MHz for high-frequency applications.

Operating temperature range from -55°C up to 150°C ensures reliability in industrial and automotive environments. Maximum power dissipation of 380 mW suitable for low power applications. Single NPN transistor configuration offers direct integration into numerous electronic circuits.

Automotive-grade qualification to AEC-Q101 standard for high reliability. Physical dimensions suitable for compact electronic assemblies.

This transistor is widely used in electronic components manufacture, power and connectors, industrial electronics, automotive electronics, telecommunications, and consumer electronics where reliable switching and amplification are needed. Explore more automotive and general-purpose NPN transistors on EnvMart for your industry needs.

Explore more products in our Bipolar Transistors category.

onsemi Transistor NPN 100 mA, 45 V, 6-Pin SOT-363 Surface Mount BC847CDW1T1G
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Frequently Asked Questions

The maximum DC collector current for the BC847CDW1T1G transistor is 100 mA, allowing for moderate current handling capability.

This model has a collector-emitter voltage rating of 45 V, making it suitable for medium voltage applications.

The minimum DC current gain (hFE) of the BC847CDW1T1G is 200, which provides good amplification performance.

The maximum transition frequency for the BC847CDW1T1G is 100 MHz, suitable for high-frequency circuitry.

The dimensions of the SOT-363 package are 2.2 mm in length, 1.35 mm in width, and 1.1 mm in height.

This transistor operates within a wide temperature range from -55°C to 150°C, ensuring reliability in various environments.

The maximum power dissipation for the BC847CDW1T1G is rated at 380 mW, suitable for moderate power applications.

Yes, the BC847CDW1T1G is qualified to the automotive AEC-Q101 standard, indicating its reliability for automotive system usage.

The BC847CDW1T1G has a pin count of 6, which is typical for its SOT-363 package.

This model features a single NPN transistor configuration, allowing for direct integration into various electronic circuits.

The maximum collector-base voltage (VCBO) for the BC847CDW1T1G is 50 V, providing additional voltage handling capability.

This transistor is widely used in electronic components manufacture, automotive electronics, telecommunications, and consumer electronics for switching and amplification tasks.

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