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onsemi Small Signal NPN Transistor 100 mA DC Collector Current, 45 V Collector Emitter Voltage, 3-Pin SOT-416 BC847BTT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.8mm
Length 1.7mm
Model BC847BTT1G
Width 1.6mm
Mount Type Surface
Series BC847BT
Maximum Operating Temperature 150°C
Package Type SOT-416
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 45V
Minimum DC Current Gain hFE 90
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc 100mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Designed for surface mount installation in compact electronic circuits.
  • Supports a maximum power dissipation of 200 mW for reliable operation.
  • Features a maximum DC current gain (hFE) of 90 for efficient signal amplification.
  • Operates within a temperature range from -55°C to 150°C ensuring durability under thermal stress.
  • Low height of 0.8 mm and compact dimensions (1.7 mm length, 1.6 mm width) for space-saving designs.
  • Meets automotive standard AEC-Q101, suitable for demanding automotive electronics applications.
  • Single NPN transistor configuration well-suited for small signal amplification tasks.
  • Offers a maximum transition frequency of 100 MHz for high-speed switching applications.

Product Description

onsemi BC847BTT1G is a small signal NPN transistor designed for surface mount applications with a 3-pin SOT-416 package. It features a maximum DC collector current of 100 mA and a maximum collector emitter voltage of 45 V, making it ideal for low-power amplification and switching.

This transistor supports a maximum power dissipation of 200 mW and operates reliably within a wide temperature range from -55°C to 150°C. Its compact dimensions (1.7 mm length, 1.6 mm width, 0.8 mm height) enable space-saving in densely packed electronic assemblies.

The BC847BTT1G achieves a minimum DC current gain of 90, ensuring effective signal amplification, and supports a maximum transition frequency of 100 MHz, suitable for moderate frequency switching applications.

It complies with the automotive AEC-Q101 standard, affirming its robustness for automotive and industrial environments. The single NPN configuration is widely used in electronic circuits for switching and amplification.

Packaging on reels supports high volume manufacturing workflows by allowing automated insertion, thereby enhancing production efficiency. Surface mount 3-pin SOT-416 package optimizes PCB space. Maximum collector current of 100 mA for versatile low power uses.

Temperature operation range from -55°C to 150°C for high reliability. Compliance with automotive AEC-Q101 standard. Reel packaging improves manufacturing throughput.

This transistor is suited for applications in automotive electronics, industrial control, consumer electronics, and telecommunications. It is a reliable choice for designers looking to implement robust small signal transistor solutions.

Discover more onsemi transistors and related discrete semiconductor technologies available for diverse industrial, automotive, and electronic circuit design applications at EnvMart.

Explore more products in our Bipolar Transistors category.

onsemi Small Signal NPN Transistor 100 mA DC Collector Current, 45 V Collector Emitter Voltage, 3-Pin SOT-416 BC847BTT1G
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Frequently Asked Questions

The BC847BTT1G has a maximum DC collector current of 100 mA.

It operates reliably within a temperature range from -55°C to 150°C.

The maximum collector-emitter voltage (Vceo) for the BC847BTT1G is 45 V.

This model is packaged in a 3-pin SOT-416 configuration, designed for surface mount applications.

The maximum power dissipation for this transistor is 200 mW.

The BC847BTT1G achieves a minimum DC current gain (hFE) of 90, allowing for effective signal amplification.

It supports a maximum transition frequency of 100 MHz, making it suitable for moderate frequency switching applications.

The BC847BTT1G complies with the automotive standard AEC-Q101, ensuring robustness for automotive applications.

The dimensions of the BC847BTT1G are 1.7 mm in length, 1.6 mm in width, and 0.8 mm in height.

This model features a single NPN transistor configuration, suitable for small signal amplification tasks.

The maximum emitter-base voltage (VEBO) for the BC847BTT1G is 6 V.

It is well-suited for applications in automotive electronics, industrial control, consumer electronics, and telecommunications.

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