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Toshiba TK N-Channel MOSFET, 214A, 80V Enhancement Mode, 3-Pin TO-220 TK100E08N1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Toshiba |
| Height | 15.1mm |
| Length | 10.16mm |
| Model | TK100E08N1 |
| Width | 4.45mm |
| Mount Type | Through Hole |
| Series | TK |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 214A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 3.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 255W |
| Typical Gate Charge Qg @ Vgs | 130nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- High maximum continuous drain current of 214 amperes for efficient power handling.
- Rated for maximum drain-source voltage of 80 volts, suitable for mid-voltage applications.
- Enhancement mode channel providing reliable transistor switching.
- Compact TO-220 package ideal for through-hole mounting.
- Low maximum drain-source resistance of 3.2 milliohms ensures minimal power loss.
- Maximum power dissipation of 255 watts supporting high power operation.
- Wide gate-source voltage range of -20 to +20 volts for flexible control.
- Typical gate charge of 130 nanocoulombs facilitating fast switching.
Product Description
Toshiba TK100E08N1 is a high-performance N-Channel MOSFET transistor designed for power semiconductor applications. It features an enhancement mode channel with a maximum continuous drain current of 214 amperes and a maximum drain-source voltage rating of 80 volts. Packaged in a compact 3-pin TO-220 form factor, this device is suitable for through-hole mounting in power electronic circuits.
With a low maximum drain-source resistance of 3.2 milliohms, the TK100E08N1 ensures high efficiency with minimal conduction losses, making it ideal for power switching and amplification tasks. The transistor supports a maximum power dissipation of 255 watts, enabling it to operate reliably in high power scenarios.
The gate-source voltage range of -20 to +20 volts provides flexible gate drive conditions, while the typical gate charge of 130 nanocoulombs enables rapid switching speeds to optimize performance in switching power supplies, motor controls, and power inverters.
The robust maximum operating temperature of 150°C allows operation in elevated temperature environments common in industrial electronics and automotive applications. Its physical dimensions of 10.16 mm length, 4.45 mm width, and 15.1 mm height ensure easy integration into standard PCB layouts.
This Toshiba MOSFET is suitable for a variety of industrial and commercial uses, including power management circuits, inverters, and amplification circuits where high current and voltage handling are needed while maintaining compact size and efficiency.
High drain current capability maximizes power throughput. Wide voltage and gate drive specification enhances versatility. Compact TO-220 package supports easy mounting and cooling solutions. Reliable performance at high operating temperatures.
Designed for use in industrial, automotive, and power supply applications. Explore more Toshiba Semiconductor products and power MOSFETs in the Electronics & Electricals section on EnvMart for your industrial and commercial needs.
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Frequently Asked Questions
The Toshiba TK100E08N1 has a maximum continuous drain current of 214 amperes, making it suitable for high current applications.
This model is rated for a maximum drain-source voltage of 80 volts, suitable for mid-voltage applications.
The TK100E08N1 is packaged in a compact 3-pin TO-220 form factor, which is ideal for through-hole mounting.
It supports a maximum power dissipation of 255 watts, enabling reliable operation in high power scenarios.
The maximum gate-source voltage for this device is -20 to +20 volts, providing flexible control options.
The typical gate charge for this model is 130 nanocoulombs, facilitating fast switching speeds.
The dimensions of the TK100E08N1 are 10.16 mm in length, 4.45 mm in width, and 15.1 mm in height.
It has a low maximum drain-source resistance of 3.2 milliohms, which ensures minimal power loss during operation.
The maximum operating temperature for the TK100E08N1 is 150°C, allowing for operation in elevated temperature environments.
This model features an enhancement mode N-channel design, providing reliable transistor switching capabilities.
It is suitable for various industrial and commercial applications, including power management circuits, inverters, and amplification circuits.
The TK100E08N1 supports through-hole mounting, making it easy to integrate into standard PCB layouts.
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