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STMicroelectronics Silicon Junction Switching Diode, Single, 8 A, 1200 V, 3-Pin TO-263 STTH812G-TR
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.4mm |
| Model | STTH812G-TR |
| Width | 9.35mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 100A |
| Maximum Forward Voltage Vf | 2.2V |
| Peak Reverse Recovery Time trr | 50ns |
| Maximum Forward Current If | 8A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 1200V |
Key Features
- TO-263 package with 3 pins designed for surface mount applications.
- Maximum forward voltage of 2.2 V ensures efficient switching performance.
- Peak reverse recovery time of 50 nanoseconds for fast switching cycles.
- Operating temperature ranges from -65°C to a maximum of 175°C for robust thermal performance.
- Capable of handling a peak non-repetitive forward surge current of 100 A.
- Non-automotive standard diode designed for industrial and electronic applications.
Product Description
STMicroelectronics STTH812G-TR is a high-performance silicon junction switching diode designed for efficient power control in industrial and electronic equipment. It features a 3-pin TO-263 surface mount package suitable for compact PCB layouts. The diode supports a continuous maximum forward current of 8 A and a peak reverse repetitive voltage of 1200 V, making it ideal for switching power supplies and rectification in power electronics.
Its low maximum forward voltage of 2.2 V and a fast peak reverse recovery time of 50 ns enable high switching efficiency and reliability. The device operates reliably in a wide temperature range from -65°C to 175°C, accommodating demanding environmental conditions.
The diode supports a peak non-repetitive forward surge current of up to 100 A, ensuring durability under transient overload conditions. The compact package dimensions with length 10.4 mm, width 9.35 mm, and height 4.6 mm allow easy integration in dense electronic assemblies.
This diode does not conform to automotive standards but is widely used in industrial, laboratory, and manufacturing applications for power conversion and control. TO-263 surface mount package with 3 pins for mounting. Maximum forward current rating of 8 A for power handling.
Peak reverse recovery time of 50 ns for fast switching. Wide operating temperature range from -65°C to 175°C. Peak surge current capacity of 100 A for transient conditions. Compact form factor with precise dimensions. Suitable for power electronics and semiconductor switching circuits.
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Frequently Asked Questions
The maximum forward current rating of this diode is 8 A.
The peak reverse repetitive voltage for the STTH812G-TR is 1200 V.
It comes in a TO-263 package with a 3-pin configuration.
The maximum forward voltage for this diode is 2.2 V.
This model can handle a peak non-repetitive forward surge current of up to 100 A.
The operating temperature range is from -65°C to a maximum of 175°C.
The dimensions are 10.4 mm in length, 9.35 mm in width, and 4.6 mm in height.
The peak reverse recovery time is 50 nanoseconds.
This diode does not conform to automotive standards and is intended for industrial and electronic applications.
It supports surface mounting, suitable for compact PCB layouts.
The diode configuration is single.
It is designed for efficient power control in industrial and electronic equipment, particularly in power supplies and rectification.
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