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onsemi Transistor 2 A NPN 50 V 3-Pin PCP Surface Mount Single 2SD1623S-TD-E

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin China
Brand onsemi
Height 1.5mm
Length 4.5mm
Model 2SD1623S-TD-E
Width 4mm
Mount Type Surface
Series 2SD1623S
Maximum Operating Temperature 150°C
Package Type PCP
Pin Count 3
Maximum Collector Emitter Voltage Vceo 50V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 60V
Maximum Power Dissipation Pd 1.3W
Maximum DC Collector Current Idc 2A
Transistor Configuration Single
Maximum Transition Frequency ft 150MHz

Key Features

  • This transistor features surface mount and PCP package design optimized for efficient mounting.
  • Maximum collector base voltage rating is 60 V enabling reliable operation in various circuits.
  • Minimum DC current gain (hFE) is 40, providing good amplification characteristics.
  • Maximum transition frequency of 150 MHz supports high frequency switching applications.
  • Compact size with dimensions of 4.5 mm length, 4 mm width, and 1.5 mm height.
  • Maximum operating temperature rated up to 150°C allows use in demanding thermal environments.
  • Designed as a single transistor with 3 pins suitable for multiple discrete semiconductor uses.
  • Polarity is NPN, common for general-purpose and power transistor use cases.

Product Description

onsemi 2SD1623S-TD-E is a high-performance NPN bipolar transistor designed for use in various electronic circuits requiring switching or amplification. It supports a maximum DC collector current of 2 A and collector emitter voltage of 50 V, making it well-suited for power control and signal processing tasks in industrial and consumer electronic devices.

The transistor features a surface mount PCP package with 3 pins, facilitating easy mounting on printed circuit boards while maintaining a compact footprint with dimensions of 4.5 mm length, 4 mm width, and 1.5 mm height. The device offers a minimum DC current gain (hFE) of 40 and a maximum transition frequency of 150 MHz, enabling efficient operation at high frequencies typically found in radio frequency and switching power supplies.

Rated for maximum power dissipation of 1.3 W and maximum operating temperatures up to 150°C, the 2SD1623S-TD-E is robust against thermal stresses commonly encountered in electronics manufacturing and use. It exhibits a maximum collector base voltage of 60 V and emitter base voltage of 6 V, ensuring stable transistor operation within specified voltage limits.

Applications for this transistor include industrial power controls, amplifier stages in audio equipment, automotive electronic systems where AEC-Q101 qualification is not required, and general-purpose semiconductor demands in manufacturing and laboratory setups.

Manufactured in China under the onsemi brand, this transistor delivers reliable performance consistent with industry standards. It is supplied in reel format to support efficient automated production processes, improving throughput in assembly lines.

This transistor features surface mount and PCP package design optimized for efficient mounting. Maximum collector base voltage rating is 60 V enabling reliable operation in various circuits. Minimum DC current gain (hFE) is 40, providing good amplification characteristics.

Maximum transition frequency of 150 MHz supports high frequency switching applications. Compact size with dimensions of 4.5 mm length, 4 mm width, and 1.5 mm height. Maximum operating temperature rated up to 150°C allows use in demanding thermal environments.

Designed as a single transistor with 3 pins suitable for multiple discrete semiconductor uses. Polarity is NPN, common for general-purpose and power transistor use cases. Manufactured in China ensuring consistent quality and performance standards.

Ideal for industrial, consumer electronics, power management, and signal amplification applications. Explore EnvMart's extensive semiconductor catalog for more electronic components and transistors that meet your design and manufacturing requirements.

Explore more products in our Bipolar Transistors category.

onsemi Transistor 2 A NPN 50 V 3-Pin PCP Surface Mount Single 2SD1623S-TD-E
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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) for this transistor is 50 V.

The minimum DC current gain (hFE) is 40, which provides good amplification characteristics.

This model has dimensions of 4.5 mm in length, 4 mm in width, and 1.5 mm in height.

The maximum operating temperature for the 2SD1623S-TD-E is rated up to 150°C.

The maximum power dissipation for this transistor is 1.3 W.

It features a surface mount PCP package design optimized for efficient mounting.

The maximum transition frequency is 150 MHz, supporting high frequency switching applications.

This transistor has a pin count of 3, designed for single transistor configuration.

The transistor polarity is NPN, which is common for general-purpose and power transistor applications.

The maximum collector base voltage (VCBO) rating is 60 V, ensuring stable operation in various circuits.

It is suitable for industrial power controls, amplifier stages in audio equipment, and automotive electronic systems where AEC-Q101 qualification is not required.

This transistor is manufactured in China under the onsemi brand, ensuring consistent quality and performance standards.

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