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| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 4.5mm |
| Model | 2SD1623S-TD-E |
| Width | 4mm |
| Mount Type | Surface |
| Series | 2SD1623S |
| Maximum Operating Temperature | 150°C |
| Package Type | PCP |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 50V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Collector Base Voltage VCBO | 60V |
| Maximum Power Dissipation Pd | 1.3W |
| Maximum DC Collector Current Idc | 2A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 150MHz |
onsemi 2SD1623S-TD-E is a high-performance NPN bipolar transistor designed for use in various electronic circuits requiring switching or amplification. It supports a maximum DC collector current of 2 A and collector emitter voltage of 50 V, making it well-suited for power control and signal processing tasks in industrial and consumer electronic devices.
The transistor features a surface mount PCP package with 3 pins, facilitating easy mounting on printed circuit boards while maintaining a compact footprint with dimensions of 4.5 mm length, 4 mm width, and 1.5 mm height. The device offers a minimum DC current gain (hFE) of 40 and a maximum transition frequency of 150 MHz, enabling efficient operation at high frequencies typically found in radio frequency and switching power supplies.
Rated for maximum power dissipation of 1.3 W and maximum operating temperatures up to 150°C, the 2SD1623S-TD-E is robust against thermal stresses commonly encountered in electronics manufacturing and use. It exhibits a maximum collector base voltage of 60 V and emitter base voltage of 6 V, ensuring stable transistor operation within specified voltage limits.
Applications for this transistor include industrial power controls, amplifier stages in audio equipment, automotive electronic systems where AEC-Q101 qualification is not required, and general-purpose semiconductor demands in manufacturing and laboratory setups.
Manufactured in China under the onsemi brand, this transistor delivers reliable performance consistent with industry standards. It is supplied in reel format to support efficient automated production processes, improving throughput in assembly lines.
This transistor features surface mount and PCP package design optimized for efficient mounting. Maximum collector base voltage rating is 60 V enabling reliable operation in various circuits. Minimum DC current gain (hFE) is 40, providing good amplification characteristics.
Maximum transition frequency of 150 MHz supports high frequency switching applications. Compact size with dimensions of 4.5 mm length, 4 mm width, and 1.5 mm height. Maximum operating temperature rated up to 150°C allows use in demanding thermal environments.
Designed as a single transistor with 3 pins suitable for multiple discrete semiconductor uses. Polarity is NPN, common for general-purpose and power transistor use cases. Manufactured in China ensuring consistent quality and performance standards.
Ideal for industrial, consumer electronics, power management, and signal amplification applications. Explore EnvMart's extensive semiconductor catalog for more electronic components and transistors that meet your design and manufacturing requirements.
Explore more products in our Bipolar Transistors category.
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