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STMicroelectronics High Voltage PNP Transistor -500 mA, -500 V, 3-Pin Surface Mount SOT-23 STR2550

Category Bipolar Transistors Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 1.4mm
Length 3.04mm
Model STR2550
Width 3mm
Mount Type Surface
Series STR
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo -500V
Minimum DC Current Gain hFE 10
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -7V
Maximum Collector Base Voltage VCBO -500V
Maximum Power Dissipation Pd 500mW
Maximum DC Collector Current Idc -500mA
Transistor Configuration Single

Key Features

  • High voltage transistor suited for surface mount applications.
  • Maximum power dissipation of 500 mW for reliable operation.
  • Minimum DC current gain (hFE) of 10 ensuring amplification performance.
  • Compact SOT-23 package with pin count of 3 for ease of PCB design.
  • Wide operating temperature range up to 150°C for industrial environments.
  • Designed for single transistor configuration with PNP polarity.
  • Maximum emitter-base voltage rated at -7 V.
  • No automotive standard compliance; suitable for general discrete semiconductor applications.

Product Description

STMicroelectronics STR2550 is a high voltage, PNP bipolar transistor designed for surface mount technology (SMT) applications. It offers a maximum DC collector current of -500 mA and a maximum collector-emitter voltage of -500 V, making it suitable for a variety of industrial, electronic, and power control circuits.

This transistor features a compact 3-pin SOT-23 package, allowing for efficient PCB layout and space optimization in electronic assemblies. With a minimum DC current gain (hFE) of 10 and a power dissipation rating of 500 mW, it ensures reliable switching and amplification performance in low to medium power applications.

The STR2550 is rated for a maximum operating temperature of 150°C, supporting durability and stability in demanding thermal environments. It is configured as a single PNP transistor with a maximum collector-base voltage and emitter-base voltage of -500 V and -7 V respectively.

Its physical dimensions - length 3.04 mm, width 3 mm, height 1.4 mm - facilitate compact designs and integration into automated manufacturing processes. This transistor does not adhere to automotive standards but is well-suited for applications in industrial electronics, power management, and semiconductor circuit designs.

High voltage PNP transistor for surface mount use. Maximum collector current of -500 mA rated for power control applications. Collector-emitter voltage up to -500 V suitable for high voltage applications. Compact SOT-23 3-pin package for efficient PCB mounting.

Minimum DC current gain (hFE) of 10 for stable amplification. Rated 500 mW power dissipation to handle medium power levels. Wide operating temperature tolerance up to 150°C for harsh environments. Single transistor configuration simplifies circuit design.

Precise dimensions to fit small form factor electronic devices. Explore other Bipolar Transistors and semiconductor products at EnvMart for your electronic component needs.

STMicroelectronics High Voltage PNP Transistor -500 mA, -500 V, 3-Pin Surface Mount SOT-23 STR2550
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Frequently Asked Questions

The maximum collector-emitter voltage (Vceo) of this transistor is -500 V.

This model has a maximum DC collector current rating of -500 mA.

It is rated for a maximum power dissipation of 500 mW.

The minimum DC current gain (hFE) is 10, ensuring stable amplification performance.

The dimensions are 3.04 mm in length, 3 mm in width, and 1.4 mm in height.

The maximum operating temperature for this transistor is 150°C.

It uses a compact SOT-23 package with a pin count of 3.

The STR2550 is designed as a single PNP transistor configuration.

The maximum emitter-base voltage (VEBO) is rated at -7 V.

No, this model does not adhere to automotive standards and is suitable for general discrete semiconductor applications.

It is suitable for industrial electronics, power management, and semiconductor circuit designs.

The country of origin for this transistor is India.

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