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onsemi 30 V 200 mA Schottky Barrier Diode Surface Mount SOD-523 RB520S30T1G

Category Schottky Barrier Diode Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.7mm
Length 1.3mm
Model RB520S30T1G
Width 0.9mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOD-523
Minimum Operating Temperature -55°C
Pin Count 2
Maximum Continuous Forward Current If 200mA
Peak Reverse Repetitive Voltage Vrrm 30V
Diode Configuration Single
Rectifier Type Schottky
Peak Reverse Current Ir 1μA
Peak Non-Repetitive Forward Surge Current Ifsm 1A
Maximum Forward Voltage Vf 600mV
ROHM 30 V 200 mA Diode Schottky 2-Pin SOD-523 RB530SM-30T2RBrand ROHM

Key Features

  • Maximum continuous forward current is 200 mA.
  • Peak reverse repetitive voltage rating is 30 V.
  • Compact SOD-523 package ideal for automated assembly.
  • Maximum forward voltage of 600 mV for efficient operation.
  • Wide operating temperature range from -55°C to 150°C.
  • Lightweight epoxy moulded case with small dimensions.
  • 2-pin configuration enables straightforward integration.
  • Low peak reverse current of 1 μA minimizes leakage.

Product Description

onsemi RB520S30T1G Schottky Barrier Diode is a surface mount, discrete semiconductor diode designed using Schottky barrier technology to provide optimal forward voltage drop and reverse current characteristics.

This diode supports a maximum continuous forward current of 200 mA and withstands peak reverse repetitive voltage up to 30 V, making it suitable for low voltage and high frequency rectification tasks.

The device is housed in a compact SOD-523 package measuring 1.3 mm in length, 0.9 mm in width, and 0.7 mm in height. This small form factor is ideal for applications where space and weight are critical factors.

The RB520S30T1G diode features a maximum forward voltage drop of 600 mV, which reduces power dissipation and improves energy efficiency. It operates reliably over a temperature range from -55°C to 150°C, suitable for a variety of industrial and commercial environments.

Additional benefits include a low peak reverse current of 1 μA, high peak non-repetitive forward surge current of 1 A, and a Pb-free epoxy molded case ensuring compliance with environmental regulations.

This diode is ideal for use in power rectification, freewheeling diodes, and polarity protection in compact electronic designs requiring efficient size and performance balance. Maximum continuous forward current: 200 mA.

Peak reverse repetitive voltage: 30 V. Surface mount SOD-523 package. Maximum forward voltage: 600 mV. Operating temperature from -55°C to 150°C. Lightweight epoxy moulded case. 2-pin diode configuration. Peak reverse current: 1 μA.

Surge current capacity: 1 A. Pb-free and RoHS compliant. This product suits industrial electronics, power management, consumer electronics, telecommunications, and automotive non-critical applications. Explore more Schottky Barrier Diodes and semiconductor components in EnvMart's extensive electronics catalog to meet diverse application needs.

onsemi 30 V 200 mA Schottky Barrier Diode Surface Mount SOD-523 RB520S30T1G
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Frequently Asked Questions

The maximum continuous forward current of the RB520S30T1G Schottky barrier diode is 200 mA.

This diode has a peak reverse repetitive voltage rating of 30 V.

The SOD-523 package of this model measures 1.3 mm in length, 0.9 mm in width, and 0.7 mm in height.

The maximum forward voltage drop for the RB520S30T1G is 600 mV.

It operates reliably over a temperature range from -55°C to 150°C.

The peak reverse current for this diode is 1 μA.

The RB520S30T1G has a high peak non-repetitive forward surge current capacity of 1 A.

This model supports surface mounting.

The diode configuration is a single 2-pin setup.

Yes, the diode features a Pb-free epoxy molded case, ensuring compliance with environmental regulations.

This diode is suitable for power rectification, freewheeling diodes, and polarity protection in compact electronic designs.

The country of origin for the RB520S30T1G is India.

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