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onsemi General Purpose NPN Transistor 600 mA 40 V 3-Pin SOT-23 MMBT2222ALT3G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.64mm
Length 3.04mm
Model MMBT2222ALT3G
Width 1.4mm
Mount Type Surface
Series MMBT2222AL
Maximum Operating Temperature 150°C
Package Type SOT-23
Pin Count 3
Maximum Collector Emitter Voltage Vceo 40V
Minimum DC Current Gain hFE 30
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 75V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc 600mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Supports a maximum DC collector current of 600 mA.
  • Maximum collector emitter voltage rated at 40 V for robust operation.
  • Compact 3-pin SOT-23 surface mount package for PCB integration.
  • Minimum DC current gain (hFE) of 30 ensures reliable amplification.
  • Maximum power dissipation of 225 mW suitable for low-power applications.
  • Maximum transition frequency of 100 MHz for high-speed switching.
  • Automotive qualified with AEC-Q101 standard compliance.
  • Operates reliably up to 150°C maximum temperature.

Product Description

onsemi MMBT2222ALT3G is a general purpose NPN bipolar transistor designed for various electronic applications requiring up to 600 mA maximum collector current and a collector emitter voltage of 40 V. Packaged in a compact 3-pin SOT-23 surface mount form factor, it facilitates easy integration into modern printed circuit boards.

This transistor features a minimum DC current gain (hFE) of 30 and can dissipate power up to 225 mW, making it suitable for low power switching and amplification needs in industrial, automotive, and consumer electronic devices.

The device supports high-speed switching with a transition frequency of up to 100 MHz and is qualified to the automotive AEC-Q101 standard, ensuring robust performance and reliability under harsh operating conditions. It can withstand operating temperatures up to 150°C.

Key dimensions are 3.04 mm length, 1.4 mm width, and 2.64 mm height, perfect for space-constrained designs. Its maximum collector base voltage is 75 V, maximum emitter base voltage 6 V, and it has a transistor configuration as single NPN type.

Supports a maximum DC collector current of 600 mA. Maximum collector emitter voltage rated at 40 V for robust operation. Compact 3-pin SOT-23 surface mount package for PCB integration. Minimum DC current gain (hFE) of 30 ensures reliable amplification.

Maximum power dissipation of 225 mW suitable for low-power applications. Maximum transition frequency of 100 MHz for high-speed switching. Automotive qualified with AEC-Q101 standard compliance. Operates reliably up to 150°C maximum temperature.

Device dimensions include length 3.04 mm, width 1.4 mm, and height 2.64 mm. Designed for general purpose switching and amplification in electronics.

This MMBT2222ALT3G transistor is ideal for industrial, automotive, laboratory, and manufacturing circuit designs that demand high efficiency and reliability in small form factor electronic components. It is widely used in switching, amplification, and signal processing applications across various sectors.

Browse further in the Bipolar Transistor category at EnvMart to find complementary components and related semiconductors for your electronics solutions.

Explore more products in our Bipolar Transistors category.

onsemi General Purpose NPN Transistor 600 mA 40 V 3-Pin SOT-23 MMBT2222ALT3G
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Frequently Asked Questions

The maximum DC collector current for this model is 600 mA.

It has a maximum collector-emitter voltage rating of 40 V.

This transistor can dissipate a maximum power of 225 mW, making it suitable for low-power applications.

The maximum transition frequency is 100 MHz, allowing for high-speed switching.

The dimensions are 3.04 mm in length, 1.4 mm in width, and 2.64 mm in height.

It is packaged in a compact 3-pin SOT-23 surface mount format, facilitating easy PCB integration.

The minimum DC current gain (hFE) is 30, ensuring reliable amplification.

It operates reliably up to a maximum temperature of 150°C.

Yes, it is qualified to the automotive AEC-Q101 standard, ensuring robust performance.

The maximum emitter-base voltage (VEBO) is rated at 6 V.

This model features a single NPN transistor configuration.

The maximum collector-base voltage (VCBO) is 75 V.

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