onsemi MMBT2222ALT3G is a general purpose NPN bipolar transistor designed for various electronic applications requiring up to 600 mA maximum collector current and a collector emitter voltage of 40 V. Packaged in a compact 3-pin SOT-23 surface mount form factor, it facilitates easy integration into modern printed circuit boards.
This transistor features a minimum DC current gain (hFE) of 30 and can dissipate power up to 225 mW, making it suitable for low power switching and amplification needs in industrial, automotive, and consumer electronic devices.
The device supports high-speed switching with a transition frequency of up to 100 MHz and is qualified to the automotive AEC-Q101 standard, ensuring robust performance and reliability under harsh operating conditions. It can withstand operating temperatures up to 150°C.
Key dimensions are 3.04 mm length, 1.4 mm width, and 2.64 mm height, perfect for space-constrained designs. Its maximum collector base voltage is 75 V, maximum emitter base voltage 6 V, and it has a transistor configuration as single NPN type.
Supports a maximum DC collector current of 600 mA. Maximum collector emitter voltage rated at 40 V for robust operation. Compact 3-pin SOT-23 surface mount package for PCB integration. Minimum DC current gain (hFE) of 30 ensures reliable amplification.
Maximum power dissipation of 225 mW suitable for low-power applications. Maximum transition frequency of 100 MHz for high-speed switching. Automotive qualified with AEC-Q101 standard compliance. Operates reliably up to 150°C maximum temperature.
Device dimensions include length 3.04 mm, width 1.4 mm, and height 2.64 mm. Designed for general purpose switching and amplification in electronics.
This MMBT2222ALT3G transistor is ideal for industrial, automotive, laboratory, and manufacturing circuit designs that demand high efficiency and reliability in small form factor electronic components. It is widely used in switching, amplification, and signal processing applications across various sectors.
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