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onsemi High-Power NPN Transistor 2 A, 100 V, 4-Pin SOT-223 NSS1C201MZ4T1G

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onsemi High-Power NPN Transistor 2 A, 100 V, 4-Pin SOT-223 NSS1C201MZ4T1G

Name: onsemi High-Power NPN Transistor 2 A, 100 V, 4-Pin SOT-223 NSS1C201MZ4T1G
Brand: onsemi
SKU: 371200
Price: 20.22 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.75mm
Length	6.7mm
Model	NSS1C201MZ4T1G
Width	3.7mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-223
Pin Count	4
Maximum Collector Emitter Voltage Vceo	100V
Minimum DC Current Gain hFE	40
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	7V
Maximum Collector Base Voltage VCBO	140V dc
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	2W
Maximum DC Collector Current Idc	2A
Transistor Configuration	Single
Maximum Transition Frequency ft	1MHz

Key Features

Maximum DC collector current is 2 amperes.
Collector-emitter voltage rating up to 100 volts.
Surface mount SOT-223 package with 4 pins for reliable connectivity.
Maximum power dissipation of 2 watts for robust performance.
Automotive qualified to AEC-Q101 standard ensuring quality and reliability.
Operational temperature up to 150 degrees Celsius.
High minimum DC current gain of 40 ensures efficient switching.
Maximum transition frequency of 1 MHz suitable for various industrial uses.

Product Description

The onsemi NSS1C201MZ4T1G is a general purpose NPN bipolar transistor engineered for applications requiring medium power handling capabilities. This transistor features a maximum collector current of 2 A and a maximum collector-emitter voltage of 100 V, making it suitable for switching and amplification tasks in industrial, automotive, and consumer electronics circuits.

Encased in a compact 4-pin SOT-223 surface mount package, it provides efficient heat dissipation and easy PCB integration. The transistor supports a power dissipation rating of 2 W, which ensures durability during continuous operation under demanding conditions. Its minimum DC current gain of 40 enables effective amplification performance, and the maximum transition frequency of 1 MHz allows operation in moderately high-frequency circuits.

The device is automotive qualified to the AEC-Q101 standard, guaranteeing reliability in automotive environments with operation up to 150°C. Dimensions are 6.7 mm length, 3.7 mm width, and 1.75 mm height, allowing for compact and lightweight circuit designs.

Maximum DC collector current is 2 amperes. Maximum collector-emitter voltage of 100 volts. Surface mount SOT-223 package type with 4 pins. Maximum power dissipation is 2 watts. Automotive rated to AEC-Q101 standard. Operational temperature range up to 150°C.

DC current gain of at least 40. Transition frequency up to 1 MHz. Compact size of 6.7 x 3.7 x 1.75 mm. Single NPN transistor configuration.

This transistor is widely used in power amplification, signal switching, automotive electronics, and general electronic circuit applications requiring a robust and reliable NPN device. Its surface mount design facilitates automated manufacturing processes and space-saving on printed circuit boards.

Choose onsemi NSS1C201MZ4T1G for high-quality bipolar transistor applications in industrial and automotive contexts. Browse EnvMart for more semiconductors from onsemi and related bipolar transistor products.

Explore more products in our Bipolar Transistors category.