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onsemi NPN Darlington Transistor 8 A 100 V 20 W Surface Mount TO-252 3-Pin NJVMJD122T4G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | NJVMJD122T4G |
| Mount Type | Surface |
| Series | MJD122 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 8A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 10μA |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 20W |
| onsemi 1 Darlington Transistor NPN, 8 A 100 V HFE | 100, 3-Pin DPAK |
Key Features
- High DC current gain of 100 ensures efficient amplification.
- Maximum power dissipation of 20 W supports high power applications.
- Wide operating temperature range from -65°C to 150°C allows reliable use in harsh environments.
- Compact dimensions with length 6.73 mm and height 2.38 mm for space-saving PCB layouts.
- Automotive standard AEC-Q101 qualified for demanding automotive electronics.
- Low maximum collector cut-off current of 10 μA reduces leakage power losses.
- Maximum collector emitter saturation voltage of 2 V for efficient switching.
- TO-252 package type optimized for surface mounting and heat dissipation.
Product Description
onsemi NJVMJD122T4G is a high-performance NPN Darlington Transistor designed for electronic and power applications requiring efficient current amplification and switching. This transistor supports a maximum continuous collector current of 8 A and a maximum collector emitter voltage of 100 V, making it suitable for robust power control circuits.
Its TO-252 surface mount package with 3 pins provides ease of installation on printed circuit boards while enabling effective thermal management. The device offers a minimum DC current gain (hFE) of 100, ensuring high gain with low input current requirements, ideal for amplifying weak signals.
With a maximum power dissipation rating of 20 W and an operating temperature range from -65°C to 150°C, it delivers reliable performance in demanding industrial, automotive, and consumer electronics.
The transistor meets the AEC-Q101 automotive standard, affirming its suitability for automotive electronic modules.
Additional features include a maximum emitter base voltage of 5 V, a maximum collector emitter saturation voltage of 2 V, and low maximum collector cut-off current of 10 μA, which contribute to energy-efficient operation and low leakage.
This component is ideal for use in power amplifiers, relay drivers, and other switching applications in industrial control, automotive electronics, and electronic devices manufacturing.
High DC current gain of 100 ensures efficient amplification. Maximum power dissipation of 20 W supports high power applications. Wide operating temperature range from -65°C to 150°C allows reliable use in harsh environments.
Compact dimensions with length 6.73 mm and height 2.38 mm for space-saving designs. Automotive standard AEC-Q101 qualified for demanding automotive electronics. Low maximum collector cut-off current of 10 μA reduces leakage power losses.
Maximum collector emitter saturation voltage of 2 V for efficient switching. TO-252 package optimized for surface mounting and thermal performance. Explore more onsemi transistors and semiconductor solutions at EnvMart for your advanced electronic projects and industrial applications.
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Frequently Asked Questions
The maximum continuous collector current for the NJVMJD122T4G is 8 A.
This model has a maximum collector emitter voltage rating of 100 V.
It supports a maximum power dissipation of 20 W, suitable for high power applications.
The NJVMJD122T4G operates within a temperature range from -65°C to 150°C.
This unit comes in a TO-252 package, optimized for surface mounting.
It has a minimum DC current gain (hFE) of 100, ensuring efficient amplification.
The maximum collector emitter saturation voltage for this model is 2 V.
The transistor has a height of 2.38 mm and a length of 6.73 mm.
It is qualified under the AEC-Q101 automotive standard, making it suitable for automotive electronics.
The maximum collector cut-off current is 10 μA, which helps reduce leakage power losses.
The NJVMJD122T4G is an NPN Darlington transistor, designed for efficient current amplification and switching applications.
This model features a 3-pin configuration, facilitating easy installation on printed circuit boards.
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