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Nexperia Silicon Junction Switching Diode Single 215mA Forward Current 3-Pin SOT-23 Package MMBD4148,215

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Nexperia Silicon Junction Switching Diode Single 215mA Forward Current 3-Pin SOT-23 Package MMBD4148,215

Name: Nexperia Silicon Junction Switching Diode Single 215mA Forward Current 3-Pin SOT-23 Package MMBD4148,215
Brand: Nexperia
SKU: 369536
Price: 0.03 USD
Availability: InStock

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Category Switching Diodes Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1.1mm
Length	3mm
Model	MMBD4148,215
Width	1.4mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Sub Type	Silicon Junction
Minimum Operating Temperature	-65°C
Pin Count	3
Maximum Power Dissipation Pd	250mW
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	4A
Maximum Forward Voltage Vf	1.25V
Peak Reverse Recovery Time trr	4ns
Maximum Forward Current If	215mA
Maximum Peak Reverse Repetitive Voltage Vrrm	75V
onsemi Switching Diode, Single, 200 mA, 3-Pin 70 V SOT-23Brand	onsemi

Key Features

Compact SOT-23 package with three pins for surface mounting.
Maximum forward current rating of 215mA ensures reliable performance.
High peak reverse voltage capability of 75V for robust operation.
Low forward voltage drop of 1.25V enhances efficiency in circuits.
Fast peak reverse recovery time of 4ns ideal for switching applications.
Supports operation in a temperature range from -65°C to 150°C.
Maximum power dissipation of 250mW suitable for small signal applications.
Designed for customized high-density circuit designs with low leakage.

Product Description

Nexperia MMBD4148,215 Silicon Junction Switching Diode is a high-performance discrete semiconductor device designed for efficient switching in electronic circuits. It features a single diode silicon junction configuration packaged in a surface-mount SOT-23 case with three pins, facilitating compact and space-saving PCB designs.

This diode supports a maximum forward current of 215mA along with a peak reverse repetitive voltage rating of 75V, making it suitable for various low current and signal switching applications. It supports a peak non-repetitive forward surge current of 4A and has a maximum forward voltage of 1.25V, ensuring efficient conduction and low power loss.

With an impressive peak reverse recovery time of 4 nanoseconds, this device offers very fast switching speeds required in modern electronics. It operates reliably in harsh temperature conditions ranging from -65°C to 150°C, proving its robustness for industrial and automotive environments, although it is not certified as an automotive standard part.

The diode dissipates up to 250mW power and is characterized by low leakage currents and low capacitance, making it ideal for high-density, high-speed circuit designs.

Typical applications include signal switching, rectification in power supplies, and protection circuits within consumer electronics, industrial controls, and communication equipment.

Compact and efficient 3-pin SOT-23 surface-mount package. Reliable silicon junction diode design from Nexperia. High peak reverse voltage for robust operation in circuits. Fast switching speeds with low capacitance characteristics.

Wide operating temperature range for industrial applications. Low leakage currents support high-density PCB designs. Maximum forward current suitable for small signal circuits. High surge current capability for transient loads.

Explore more discrete semiconductor components and Switching Diodes in EnvMart's Electronics & Electricals category to find suitable devices supporting your design and manufacturing needs.

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Frequently Asked Questions

The maximum forward current rating of this diode is 215mA, ensuring reliable performance in various applications.

It has a peak reverse repetitive voltage rating of 75V, making it suitable for robust operation in circuits.

This diode is packaged in a compact SOT-23 surface-mount package with three pins, facilitating space-saving PCB designs.

The maximum forward voltage drop is 1.25V, which enhances efficiency in circuits by reducing power loss.

The peak reverse recovery time is 4 nanoseconds, which is ideal for fast switching applications.

It operates reliably in a temperature range from -65°C to 150°C, suitable for harsh environments.

The maximum power dissipation for this diode is 250mW, making it suitable for small signal applications.

The peak non-repetitive forward surge current rating is 4A, allowing it to handle transient loads effectively.

The dimensions of this model are 3mm in length, 1.4mm in width, and 1.1mm in height.

This model features a single diode silicon junction configuration, suitable for various applications.

Typical applications include signal switching, rectification in power supplies, and protection circuits within consumer electronics and industrial controls.

This diode is characterized by low leakage currents, which supports high-density PCB designs.