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Nexperia High Voltage PNP Bipolar Transistor , -150 mA Collector Current, -500 V Collector Emitter Voltage PBHV9050T,215

Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 3mm
Model PBHV9050T,215
Width 1.4mm
Mount Type Surface
Series PBHV9050T
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -500V
Minimum DC Current Gain hFE 80
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -6V
Maximum Collector Base Voltage VCBO -500V
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc -150mA
Transistor Configuration Single
Maximum Transition Frequency ft 50MHz

Key Features

  • This transistor is designed with PNP polarity for high voltage applications.
  • It supports a maximum power dissipation of 300 mW ensuring reliable performance.
  • The device features a minimum DC current gain (hFE) of 80 for efficient amplification.
  • Operating temperature range spans from -55°C to 150°C suitable for harsh environments.
  • Complies with RoHS standards for environmental safety.
  • Compact dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height enable space-efficient PCB design.
  • Three-pin configuration in SOT-23 package facilitates surface mounting on PCBs.

Product Description

The Nexperia PBHV9050T,215 is a high voltage PNP bipolar transistor engineered for electronic components and power connector applications in various industrial sectors including electronics manufacturing and semiconductor device development.

This transistor supports a maximum DC collector current of -150 mA and a collector emitter voltage of -500 V, making it suitable for demanding switching and amplification tasks. Packaged in a small SOT-23 form factor with three pins, it facilitates easy surface mounting on printed circuit boards, allowing compact and efficient circuit design.

Featuring a maximum power dissipation rating of 300 mW and a minimum DC current gain of 80, it ensures dependable operation across its -55°C to 150°C operating temperature range.

The device includes a maximum transition frequency of 50 MHz and provides robust electrical characteristics such as a maximum collector base voltage of -500 V and emitter base voltage of -6 V.

Manufactured in China and compliant with RoHS directives, this transistor meets modern environmental and safety standards. This transistor is designed with PNP polarity for high voltage applications. It supports a maximum power dissipation of 300 mW ensuring reliable performance.

The device features a minimum DC current gain (hFE) of 80 for efficient amplification. Operating temperature range spans from -55°C to 150°C suitable for harsh environments. Complies with RoHS standards for environmental safety.

Compact dimensions of 3 mm length, 1.4 mm width, and 1.1 mm height enable space-efficient PCB design. Three-pin configuration in SOT-23 package facilitates surface mounting on PCBs.

Ideal for use in industrial, laboratory, electronics manufacturing, and power management applications where reliable and efficient transistor performance is critical. EnvMart offers this product for professionals seeking Nexperia quality and compliance.

Explore more products in our Bipolar Transistors category.

Nexperia High Voltage PNP Bipolar Transistor , -150 mA Collector Current, -500 V Collector Emitter Voltage PBHV9050T,215
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Frequently Asked Questions

The maximum collector emitter voltage (Vceo) for the PBHV9050T,215 is -500 V.

This transistor supports a maximum DC collector current of -150 mA.

The maximum power dissipation rating for this model is 300 mW.

The operating temperature range for the PBHV9050T,215 spans from -55°C to 150°C.

The minimum DC current gain (hFE) for this model is 80.

This transistor is packaged in a SOT-23 type, which facilitates surface mounting.

The dimensions of the PBHV9050T,215 are 3 mm in length, 1.4 mm in width, and 1.1 mm in height.

The maximum transition frequency (ft) for the PBHV9050T,215 is 50 MHz.

This model is a PNP bipolar transistor designed for high voltage applications.

Yes, this transistor complies with RoHS standards for environmental safety.

This transistor features a three-pin configuration.

The maximum emitter base voltage (VEBO) for the PBHV9050T,215 is -6 V.

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