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onsemi Small Signal PNP Transistor, 500 mA Collector Current, 80 V DC Collector-Emitter Voltage, 3-Pin SOT-23 SMMBTA56LT1G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model SMMBTA56LT1G
Width 2.64mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -80V dc
Minimum DC Current Gain hFE 100
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -4V
Maximum Collector Base Voltage VCBO 80V dc
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc -500mA
Transistor Configuration Single
Maximum Transition Frequency ft 100MHz

Key Features

  • Designed for low power switching and amplification applications.
  • Maximum power dissipation of 225 mW supports moderate power usage.
  • High gain with minimum DC current gain of 100.
  • Wide operating temperature range from -55°C to 150°C.
  • Compact SOT-23 package with 3 pins for surface mounting.
  • Maximum transition frequency of 100 MHz for high-speed switching.
  • Collector-base voltage rating up to 80 V DC.
  • Emitter-base voltage maximum -4 V supports robust operation.

Product Description

onsemi SMMBTA56LT1G is a small signal PNP bipolar transistor designed for low power electronic applications requiring efficient switching and amplification. It supports a maximum DC collector current of 500 mA and can handle collector-emitter voltages up to 80 V DC. Packaged in a compact 3-pin SOT-23 surface-mount case, this transistor facilitates efficient PCB layout in dense electronic designs.

Typical uses include signal amplification in low-power circuits, switching in control and interface circuits, and general purpose amplification tasks in industrial, manufacturing, and consumer electronics environments. Its high gain (minimum hFE of 100) and transition frequency of 100 MHz offer reliable performance in high-speed switching and analog applications.

The device operates reliably over a broad temperature range from -55°C to 150°C, making it suitable for various environmental conditions. Its maximum power dissipation of 225 mW ensures it can handle moderate power levels while maintaining stable operation.

Physical dimensions are compact, measuring 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height, enabling space-efficient PCB designs. This transistor does not carry automotive qualification standards but is ideal for general purpose electronic component applications.

Applications span industrial automation, instrumentation, telecommunications, and general electronics manufacturing, where reliable bipolar transistor performance is necessary. Designed for low power switching and amplification applications.

Maximum power dissipation of 225 mW supports moderate power usage. Wide operating temperature range from -55°C to 150°C. Maximum transition frequency of 100 MHz for high-speed switching. Compact SOT-23 package with 3 pins for surface mounting.

Collector-Emitter voltage rating of 80 V DC ensures reliable operation. Discover more semiconductor products and Bipolar Transistors at EnvMart to meet your electronics design and manufacturing requirements.

onsemi Small Signal PNP Transistor, 500 mA Collector Current, 80 V DC Collector-Emitter Voltage, 3-Pin SOT-23 SMMBTA56LT1G
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Frequently Asked Questions

The maximum DC collector current for the SMMBTA56LT1G is 500 mA.

The collector-emitter voltage rating for this transistor is up to 80 V DC.

This model comes in a compact SOT-23 package with 3 pins for surface mounting.

It operates reliably over a temperature range from -55°C to 150°C.

The maximum power dissipation for the SMMBTA56LT1G is 225 mW.

The minimum DC current gain (hFE) for this model is 100.

This transistor is suitable for low power switching and amplification applications, including industrial automation, instrumentation, and telecommunications.

The maximum transition frequency for this model is 100 MHz, making it suitable for high-speed switching applications.

The physical dimensions of this transistor are 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.

The maximum emitter-base voltage (VEBO) for the SMMBTA56LT1G is -4 V.

The SMMBTA56LT1G is a PNP bipolar transistor.

This transistor does not carry automotive qualification standards but is suitable for general purpose electronic component applications.

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