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onsemi Transistor 600 mA NPN, 160 V, 3-Pin SOT-23 MMBT5551LT3G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model MMBT5551LT3G
Width 2.64mm
Mount Type Surface
Series MMBT5551
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 160V
Minimum DC Current Gain hFE 30
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 180V dc
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc 600mA
Transistor Configuration Single

Key Features

  • Suitable for switching and amplification applications.
  • Compact SOT-23 package ensures easy surface mounting.
  • Maximum power dissipation of 225 mW for efficient heat management.
  • Wide operating temperature range from -55°C to 150°C.
  • Low minimum DC current gain of 30 ensuring reliable performance.
  • Pin count of 3, compatible with standard designs.
  • Maximum collector base voltage of 180 V dc for robust operation.
  • Maximum emitter base voltage of 6 V providing protection against voltage spikes.

Product Description

onsemi MMBT5551LT3G Transistor is a high-quality small signal bipolar NPN transistor designed for medium power switching and amplification in electronic circuits. Featuring a maximum DC collector current of 600 mA and collector emitter voltage rating of 160 V, this transistor is delivered in a compact 3-pin SOT-23 surface mount package suitable for space-constrained applications.

It offers a maximum power dissipation of 225 mW which facilitates efficient thermal handling during continuous operation. The device supports a wide temperature range from -55°C to 150°C, making it well-suited for demanding industrial, automotive, and consumer electronics environments.

The transistor provides a reliable minimum DC current gain (hFE) of 30, enabling robust amplification performance. It features a maximum collector base voltage of 180 V dc and maximum emitter base voltage of 6 V to ensure safe operation within specified voltage limits.

This MMBT5551LT3G is part of the MMBT5551 series from onsemi, ideal for usage in switching regulators, driver stages of audio amplifiers, and general purpose amplification functions.

Supports switching and amplification in power and signal electronic applications. Small SOT-23 surface mount package minimizes PCB space requirements. Wide operating temperature range enables versatile industrial use. Optimized electrical ratings for safe and reliable component performance.

Standard 3-pin configuration for simple integration into circuits. Suitable for industrial, automotive, and consumer electronics sectors. Explore a comprehensive range of Bipolar Transistors and discrete semiconductor components on EnvMart to meet diverse design and industrial requirements.

onsemi Transistor 600 mA NPN, 160 V, 3-Pin SOT-23 MMBT5551LT3G
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Frequently Asked Questions

The MMBT5551LT3G transistor has a maximum DC collector current rating of 600 mA.

This model has a maximum collector-emitter voltage rating of 160 V.

The MMBT5551LT3G is delivered in a compact SOT-23 surface mount package.

It features a minimum DC current gain (hFE) of 30, ensuring reliable performance.

The dimensions of this transistor are 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height.

The maximum power dissipation for the MMBT5551LT3G is 225 mW, which aids in efficient thermal management.

It operates within a wide temperature range from -55°C to 150°C.

The maximum collector base voltage (VCBO) is 180 V dc, providing robust operation.

This model is a bipolar NPN transistor, suitable for switching and amplification applications.

The MMBT5551LT3G has a pin count of 3, making it compatible with standard designs.

The maximum emitter base voltage (VEBO) is 6 V, which helps protect against voltage spikes.

This transistor is manufactured in India.

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