World's First Climate Tech Platform | Free Delivery in India | Global Shipping

For Bulk Enquiry: sales@envmart.com

onsemi Transistor 500 mA NPN 25 V 3-Pin SOT-23 MMBTH10LT3G

Free Delivery in India | Lowest Global Shipping Charges

onsemi Transistor 500 mA NPN 25 V 3-Pin SOT-23 MMBTH10LT3G

Name: onsemi Transistor 500 mA NPN 25 V 3-Pin SOT-23 MMBTH10LT3G
Brand: onsemi
SKU: 369442
Price: 0.05 USD
Availability: InStock



Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.11mm
Length	3.04mm
Model	MMBTH10LT3G
Width	2.64mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	25V
Minimum DC Current Gain hFE	60
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	25V
Maximum Collector Base Voltage VCBO	30V dc
Maximum Power Dissipation Pd	225mW
Maximum DC Collector Current Idc	500mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz

Key Features

The transistor is of NPN polarity suitable for signal and switching applications.
It has a maximum power dissipation of 225 mW and a minimum DC current gain of 60.
Maximum operating temperature is 150°C, with a minimum operating temperature of -55°C.
The device is surface mountable, designed for high frequency operation up to 100 MHz.
Maximum collector-base voltage is 30 V DC and the emitter-base voltage max is 25 V.
The transistor is intended for industrial and electronic circuit applications including switching and amplification.

Product Description

onsemi MMBTH10LT3G is a reliable bipolar NPN transistor designed with a maximum DC collector current of 500 mA and a collector-emitter voltage rating of 25 V. Packaged in a compact 3-pin SOT-23 surface-mount package, this transistor is ideal for space-constrained electronic circuits.

It features a single transistor configuration with a high operating frequency capability up to 100 MHz, making it suitable for RF and high-speed switching applications. The device supports a power dissipation rating of 225 mW, ensuring dependable performance under various load conditions.

Thermal operation spans a wide temperature range from -55°C to 150°C, which suits rigorous industrial environments and embedded electronics. Its minimum DC current gain (hFE) of 60 ensures efficient current amplification.

Dimensionally, it measures 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height, enabling compact PCB layout integration. The device has maximum collector-base and emitter-base voltage tolerances of 30 V DC and 25 V respectively, ensuring robust electrical performance.

This transistor is commonly utilized in industrial electronics, consumer devices, and communication equipment for switching, amplification, and driving loads within safe operating limits.

The product adheres to industrial-grade quality but does not carry specific automotive or other certifications. The small outline package allows surface mounting to printed circuit boards, facilitating automated manufacturing processes.

Applications include signal amplification, switching in power regulation circuits, and small signal switching. The transistor's design supports durable operation in electronic manufacturing, testing, and prototyping environments.

It is widely adopted in electronics projects requiring reliable bipolar junction transistor performance in a miniature form factor. Explore more semiconductors and bipolar transistor options in the Electronics & Electricals category at EnvMart.

Explore more products in our Bipolar Transistors category.