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onsemi Small Signal NPN Transistor 600 mA 160 V 3-Pin SOT-23 MMBT5551LT3G

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.11mm
Length 3.04mm
Model MMBT5551LT3G
Width 2.64mm
Mount Type Surface
Series MMBT5551
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 160V
Minimum DC Current Gain hFE 30
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 6V
Maximum Collector Base Voltage VCBO 180V dc
Maximum Power Dissipation Pd 225mW
Maximum DC Collector Current Idc 600mA
Transistor Configuration Single

Key Features

  • Provides maximum collector current of 600 mA suitable for small signal amplification.
  • Offers a maximum collector emitter voltage rating of 160 V.
  • Surface mount transistor designed for easy PCB integration.
  • Features a minimum DC current gain (hFE) of 30 for efficient signal control.
  • Operates within temperature range from -55°C to 150°C for diverse environments.
  • Maximum power dissipation of 225 mW for reliable operation.
  • Single transistor configuration with NPN polarity.
  • Meets package and mounting standards without automotive qualification.

Product Description

onsemi MMBT5551LT3G is a small signal NPN bipolar transistor designed for general purpose amplification and switching applications. This transistor supports a maximum DC collector current of 600 mA and can withstand collector emitter voltages up to 160 V, making it appropriate for moderate power electronic circuits.

Encased in a compact 3-pin SOT-23 surface mount package, it enables space-saving PCB designs and is suitable for automated assembly processes. With a minimum DC current gain of 30, this transistor provides sufficient amplification for low to medium signal strength applications.

The MMBT5551LT3G operates reliably across a wide temperature range from -55°C to 150°C, ensuring robust performance in industrial, automotive (non-audio), and consumer electronic devices. Its maximum power dissipation rating of 225 mW supports moderate power handling needs.

This transistor is a single device with NPN polarity, ideal for switching, amplification, and signal processing in industrial electronics, measurement equipment, consumer electronics, and other commercial semiconductor circuits.

Maximum DC collector current of 600 mA for efficient signal and power control. Collector emitter voltage up to 160 V to support high voltage switching. Surface mount package SOT-23 for compact and automated PCB assembly.

Minimum DC current gain of 30 to ensure proper amplification. Wide operating temperature range from -55°C to 150°C for harsh environments. Compact dimensions: Length 3.04 mm, Width 2.64 mm, Height 1.11 mm for space-saving design.

Maximum power dissipation of 225 mW for reliable device operation. Single transistor configuration with NPN polarity for diverse applications. Designed for industrial, laboratory, commercial, and electronic manufacturing usage.

Choose onsemi MMBT5551LT3G for your bipolar transistor needs where space, reliability, and moderate power handling are required. This transistor is suited for power regulation circuits, amplifier stages, and general purpose switching modules in varied electronic products.

Explore additional bipolar transistor options and electronic components across EnvMart to support your industrial and commercial electronic design projects.

Explore more products in our Bipolar Transistors category.

onsemi Small Signal NPN Transistor 600 mA 160 V 3-Pin SOT-23 MMBT5551LT3G
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Frequently Asked Questions

The maximum DC collector current for the MMBT5551LT3G is 600 mA, suitable for efficient signal and power control.

This model has a maximum collector-emitter voltage rating of 160 V, making it appropriate for high voltage switching applications.

The transistor has dimensions of 3.04 mm in length, 2.64 mm in width, and 1.11 mm in height, allowing for compact PCB designs.

It features a minimum DC current gain (hFE) of 30, which is sufficient for effective amplification in various applications.

This transistor operates reliably within a temperature range from -55°C to 150°C, suitable for diverse environments.

The maximum power dissipation for this model is 225 mW, supporting moderate power handling needs in electronic circuits.

The MMBT5551LT3G is encased in a 3-pin SOT-23 surface mount package, designed for easy PCB integration and automated assembly.

This model features a single transistor configuration with NPN polarity, suitable for various amplification and switching applications.

The maximum collector-base voltage (VCBO) for this transistor is 180 V DC, allowing it to handle significant voltage levels.

This transistor is designed for general purpose amplification and switching applications in industrial, automotive, and consumer electronics.

The maximum emitter-base voltage (VEBO) for the MMBT5551LT3G is 6 V, which is important for ensuring proper operation in circuits.

The country of origin for this transistor is India, which is relevant for sourcing and regional compliance considerations.

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