onsemi Low Noise Bipolar NPN Transistor 50 mA, 30 V, 3-Pin SOT-23 MMBT5089LT1G

onsemi MMBT5089LT1G is a low noise bipolar NPN transistor featuring a 50 mA maximum DC collector current and 30 V maximum collector-emitter voltage rating. Encapsulated in a compact 3-pin SOT-23 surface mount package, it is suitable for modern PCB assembly and compact circuit designs.

This transistor delivers a high minimum DC current gain of 400, making it ideal for low power amplification and switching applications. The maximum power dissipation rating of 225 mW ensures reliable operation under typical industrial and electronic circuit conditions.

It supports a wide operating temperature range from -55°C to 150°C, enabling dependable functionality in harsh environmental conditions commonly found in industrial, commercial, and consumer electronics applications.

The maximum transition frequency of 20 MHz allows the transistor to handle moderate frequency signals efficiently. Its NPN polarity makes it compatible with standard bipolar transistor configurations.

The device dimensions are small, with a length of 3.04 mm, width of 2.64 mm, and height of 1.11 mm, optimizing it for space-constrained uses. It also meets standard industrial quality without specific approvals or automotive certification.

Maximum DC collector current of 50 mA ensures suitability for low power amplification. Maximum collector-emitter voltage rating of 30 V supports moderate voltage applications. Compact SOT-23 surface mount package with 3 pins for versatile PCB mounting.

High minimum DC current gain (hFE) of 400 improves amplification efficiency. Maximum power dissipation of 225 mW maintains transistor reliability under typical loads. Operating temperature range from -55°C to 150°C for robust industrial performance.

Maximum transition frequency of 20 MHz enables moderate frequency signal handling. Designed with NPN transistor polarity for standard bipolar transistor circuits.

This transistor is widely applicable for industrial, electronic component manufacturing, and laboratory use cases where reliable low noise bipolar transistors are required. It is an essential component for power management and analog circuit design within electrical and electronics sectors.

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