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onsemi 200 V 3 A General Purpose Diode Through Hole 2-Pin DO-201AD 1N5402G

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onsemi 200 V 3 A General Purpose Diode Through Hole 2-Pin DO-201AD 1N5402G

Name: onsemi 200 V 3 A General Purpose Diode Through Hole 2-Pin DO-201AD 1N5402G
Brand: onsemi
SKU: 368520
Price: 0.29 USD
Availability: InStock

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Category Diode Brand onsemi Condition New

Specifications

Country of Origin	China
Diameter	5.3mm
Brand	onsemi
Height	9.5mm
Length	9.5mm
Model	1N5402G
Width	0.45mm
Mount Type	Through Hole
Series	1N5400
Maximum Operating Temperature	150°C
Package Type	DO-201AD
Minimum Operating Temperature	-65°C
Pin Count	2
Maximum Continuous Forward Current If	3A
Peak Reverse Repetitive Voltage Vrrm	200V
Diode Configuration	Single
Rectifier Type	General Purpose
Peak Reverse Current Ir	50μA
Peak Non-Repetitive Forward Surge Current Ifsm	200A
Maximum Forward Voltage Vf	1V
Peak Reverse Recovery Time trr	1.6ns
onsemi 200V 3A, Silicon Junction Diode, 2-Pin DO-201AD 1N5402GBrand	ON Semiconductor
onsemi 200 V 3 A Diode Low Leakage 2-Pin DO-41 1N5402RLGBrand	onsemi

Key Features

Suitable for through hole mounting applications.
Single diode configuration with 2-pin setup for easy circuit integration.
Maximum continuous forward current of 3 A ensures reliable performance.
Peak reverse repetitive voltage rated at 200 V for robust protection.
Low peak reverse current of 50 μA minimizes leakage losses.
Can withstand peak non-repetitive forward surge current of 200 A for transient events.
Maximum forward voltage drop of 1 V optimizes power efficiency.
Wide operating temperature range from -65°C to 150°C supports harsh environments.

Product Description

onsemi 1N5402G is a high-quality general purpose diode suitable for electronic and power rectification uses. It is designed for through-hole mounting with a 2-pin DO-201AD package, providing a robust and reliable component for various applications.

This diode supports a maximum continuous forward current of 3 A and a peak reverse repetitive voltage rating of 200 V, making it versatile for power and industrial electronics. The device has a low peak reverse current of 50 μA which minimizes leakage and enhances efficiency.

The diode can tolerate a peak non-repetitive forward surge current of 200 A, offering protection against transient overloads typically encountered in switching and power supply circuits. It features a low forward voltage drop of 1 V, reducing power dissipation and improving overall system performance.

Engineered to operate reliably in extreme temperature conditions ranging from -65°C up to 150°C, the 1N5402G ensures stable performance in industrial, manufacturing, and electronic equipment environments.

Physical dimensions of 9.5 mm height and length, 5.3 mm diameter, and 0.45 mm width allow the diode to integrate seamlessly in compact circuit designs. Its single diode configuration simplifies circuit layouts.

Suitable for through hole mounting applications. Single diode, 2-pin DO-201AD package for efficient circuit integration. Maximum continuous forward current: 3 A. Peak reverse repetitive voltage: 200 V. Low peak reverse current of 50 μA for minimal leakage.

Withstands peak non-repetitive forward surge current of 200 A. Maximum forward voltage of 1 V for high efficiency. Operating temperature range: -65°C to 150°C. Compact dimensions for space-saving installation. General purpose usage suitable for power rectification circuits.

This product is manufactured in China and meets industry standards for reliability and performance. It is widely used in various industrial, electronics manufacturing, and power systems applications which require durable silicon junction Diodes.

Explore more onsemi components and related electronic parts in the EnvMart semiconductor catalog for comprehensive industrial and research needs.