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onsemi Transistor 500 mA NPN + PNP, 30 V, 6-Pin SOT-363 FFB2227A

Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.1mm
Length 3mm
Model FFB2227A
Width 3mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-363
Minimum Operating Temperature -55°C
Pin Count 6
Maximum Collector Emitter Voltage Vceo 30V
Minimum DC Current Gain hFE 30
Transistor Polarity NPN + PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 60V
Maximum Power Dissipation Pd 300mW
Maximum DC Collector Current Idc 500mA
Transistor Configuration Isolated
Maximum Transition Frequency ft 100MHz

Key Features

  • Supports a maximum power dissipation of 300 mW ensuring reliable performance.
  • Features isolated transistor configuration suitable for various circuit applications.
  • Minimum DC current gain (hFE) is 30, providing effective amplification.
  • Operates in temperature range from -55°C to 150°C for extended durability.
  • Maximum transition frequency is 100 MHz ideal for high-frequency applications.
  • Has a pin count of 6 in a surface mount SOT-363 package.
  • Transistor polarity includes both NPN and PNP types.
  • Compact dimensions with 3 mm length, 3 mm width, and 1.1 mm height.

Product Description

onsemi FFB2227A Transistor is a dual transistor device combining NPN and PNP types, ideal for compact and surface-mounted electronic circuit designs. It features a maximum DC collector current of 500 mA and a collector emitter voltage rating of 30 V, housed in a small 6-pin SOT-363 package optimized for space saving and efficient board layout.

Designed with isolated transistor configuration, the device provides reliable switching and amplification for a variety of industrial, consumer electronics, and communication circuit applications. The transistor exhibits a minimum DC current gain (hFE) of 30 and a maximum power dissipation of 300 mW ensuring stable operation under typical load conditions.

The FFB2227A transistor supports operation across a wide temperature range from -55°C to 150°C, making it suitable for environments demanding thermal endurance. It handles frequencies up to 100 MHz, which is beneficial for high-speed switching and signal processing tasks.

The compact physical dimensions of 3 mm length, 3 mm width, and 1.1 mm height allow integration into densely packed printed circuit boards (PCB). Maximum collector base and emitter base voltages of 60 V and 5 V respectively provide design flexibility in various electronic topologies.

This transistor does not carry specific automotive or industrial standard certifications but is widely used in general electronics manufacturing, communication equipment, instrumentation, and power control applications.

Maximum collector current of 500 mA with NPN and PNP polarity. Compact 6-pin SOT-363 surface mount package. Wide operating temperature range from -55°C to 150°C. Maximum power dissipation of 300 mW. High transition frequency up to 100 MHz.

Isolated transistor configuration for improved circuit integration. Robust voltage ratings: 30 V collector emitter, 60 V collector base, 5 V emitter base.

onsemi products offer proven performance and reliability in electronics, power regulation, and signal amplification. Explore the extensive catalog of Bipolar Transistors and semiconductor components for your industrial, laboratory, and commercial circuit requirements on EnvMart.

onsemi Transistor 500 mA NPN + PNP, 30 V, 6-Pin SOT-363 FFB2227A
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Frequently Asked Questions

The maximum DC collector current for the FFB2227A transistor is 500 mA.

This model has a maximum collector emitter voltage rating of 30 V.

It operates within a temperature range of -55°C to 150°C.

The maximum transition frequency for this transistor is 100 MHz.

The minimum DC current gain (hFE) is 30.

It is housed in a compact 6-pin SOT-363 surface mount package.

The dimensions are 3 mm in length, 3 mm in width, and 1.1 mm in height.

The maximum power dissipation is 300 mW.

This model includes both NPN and PNP transistor types.

The maximum emitter base voltage (VEBO) is 5 V.

The maximum collector base voltage (VCBO) is 60 V.

It is suitable for various industrial, consumer electronics, and communication circuit applications.

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